Oki Electric Industry Co., Ltd.

Shota Ohtsubo

Junichi Suyama

Akihiro Hirota

Wataru Nagai

A low power consumption type dynamic random access memory (DRAM) operable with reduced current consumption responsive to an external signal, without causing occurrence of malfunction during low current consumption. An input circuit for receiving signals, a memory array for holding data, and a peripheral circuit for controlling the memory array are driven by an internal voltage supplied by two groups of internal voltage receiving circuits, while an output circuit for outputting signals is driven by an external power supply. The two groups of internal voltage receiving circuits are deactivated in response to an externally provided power supply control signal, and the output circuit is controlled so as to be in a high impedance condition with voltage of the external power supply being applied thereto.

Dynamic random access memory with low power consumption

There provides a low power consumption type dynamic random access memory (DRAM) with reduced current consumption in the DRAM by a signal from outside and without causing occurrence of malfunction at times of low current consumption. An input circuit for receiving signals, a memory array for holding data, and a peripheral circuit for controlling the memory array are driven by an internal voltage supplied by two groups of internal voltage receiving circuits while an output circuit for outputting signals is driven by an external power supply. The two groups of internal voltage receiving circuits are deactivated in response to a power supply control signal CONT inputted from outside, and the output circuit is controlled so as to be in a high impedance condition with voltage of the external power supply being applied thereto.

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Tokyo, Japan

Shota Ohtsubo