Mitsubishi Electric Corporation

Shota Morisaki

Yoshiko Tamada

Takayoshi Miki

Yasushi Nakayama

Junichi Nakashima

Yukihiko Wada

Seiji Oka

Keisuke Kimura

Shinya Yano

Yukimasa Hayashida

Yukio Nakashima

Hiroyuki Takagi

Daisuke Oya

Seiki Hiramatsu

Ryutaro Date

Hodaka Rokubuichi

Ryo Tsuda

Kohei Onda

Kenta Uchida

Tetsu Negishi

Yoshitaka Naka

Tomonobu Mihara

Shinya Kurachi

Yuji Nemoto

A gate drive circuit includes a resistor, a current detector that detects a current flowing through the resistor, and a gate driver. The gate driver applies an electric signal between a gate terminal and a source terminal of a module to drive a switching semiconductor element. One end of the resistor is connected to a drain terminal, the opposite end of the resistor is connected to one end of the current detector, and the opposite end of the current detector is connected to the gate driver. The current detector outputs a detection value of the current to the gate driver, and the gate driver changes a gate drive speed of the switching semiconductor element according to the detection value.

Gate drive circuit and power conversion device

A control unit of a gate drive circuit applies, between a gate and a source of a switching element, a first voltage so as to turn on the switching element. After transference of drain current of the switching element, the control unit interrupts the first voltage and applies, between the gate and the source of the switching element, a second voltage that is lower than the first voltage and that is higher than a mirror voltage of the switching element. When no short-circuit current is flowing to the switching element, the control unit interrupts the second voltage and applies, between the gate and the source of the switching element, a third voltage higher than the second voltage.

Gate drive circuit

A parallel driving device that drives parallel-connected semiconductor elements includes a control unit and a gate driving circuit. The control unit detects a temperature difference between the semiconductor elements on the basis of detected values by temperature sensors that detect temperatures of the individual semiconductor elements. The control unit generates a control signal for changing the timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference. The gate driving circuit generates a first driving signal for driving the semiconductor elements, and generates a second driving signal that is the first driving signal delayed on the basis of the control signal, and applies the second driving signal to the first semiconductor element.

Parallel driving device and power conversion device

A semiconductor device includes: a circuit member including a planar portion; a terminal portion formed above the front surface of the planar portion of the circuit member and parallel to the planar portion; a semiconductor element which has an upper surface located below an upper surface of the terminal portion and is formed on the front surface of the planar portion of the circuit member; a resin layer arranged on the semiconductor element and having first openings through which the semiconductor element is exposed; a conductive layer arranged on the resin layer, including an upper surface located above the upper surface of the terminal portion, and joined to the semiconductor element through the first openings; and a sealing member including an upper surface parallel to the planar portion and integrally sealing the circuit member, the semiconductor element, the resin layer, the conductive layer, and part of the terminal portion.

Semiconductor device and power converter

A semiconductor device includes: a first power supply terminal; a second power supply terminal; an output terminal; a first switching element connected between the first power supply terminal and the output terminal; and a second switching element connected between the second power supply terminal and the output terminal. The first power supply terminal includes: a first facing portion; a second facing portion; and a third facing portion. The first facing portion and the second facing portion are provided such that, upon application of a current, the current flows through the first facing portion and the second facing portion in a direction opposite to a direction in which the current flows through each of portions in the second power supply terminal that face the first facing portion and the second facing portion.

Semiconductor device and power conversion device

An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.

Semiconductor module and power conversion apparatus

Gates of a plurality of semiconductor switching elements are electrically connected to a common gate control pattern by gate wires. Sources of the plurality of semiconductor switching elements are electrically connected to a common source control pattern by source wires. The gate control pattern is disposed to interpose the source control pattern between the gate control pattern and each of the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel. Hence, each of the gate wires becomes longer than each of the source wires, and has an inductance larger than the source wire. Accordingly, gate oscillation is reduced or suppressed in the plurality of semiconductor switching elements that are connected in parallel and that operate in parallel.

Semiconductor module and power conversion device

In a short circuit protection circuit, a first gate resistor is connected between a first output node of a gate driver and a first gate terminal. A first real-time control circuit operates to decrease a potential of the first gate terminal when the first real-time control circuit detects that a short circuit current passes through a first semiconductor switching element. The operation monitoring circuit includes a differential voltage circuit configured to output a potential difference between a potential proportional to a potential difference across the first gate resistor and the potential of a first power supply. The operation monitoring circuit monitors, based on an output of the differential voltage circuit, whether the first real-time control circuit is in operation.

Short circuit protection circuit for semiconductor switching element

A power switching apparatus includes a plurality of semiconductor switching devices connected in parallel with each other and a plurality of balance resistor units. The plurality of balance resistor units each have one end connected to a control electrode of an associated semiconductor switching device and the other end to which a common control signal is input. Each balance resistor unit is configured to have a resistance value switched between different values depending on whether the plurality of semiconductor switching devices are turned on or turned off in accordance with the control signal.

Growing community of inventors

Chiyoda-ku, Japan

Shota Morisaki