Screen Holdings Co., Ltd.

Shota Iwahata

Ayumi Higuchi

Eri Fujita

Masayuki Otsuji

Takahiro Yamaguchi

Naoyuki Osada

Akihisa Iwasaki

Yoshiyuki Fujitani

Hiroaki Takahashi

Naozumi Fujiwara

Tomonori Kojimaru

Kazunori Fujikawa

Yosuke Okuya

Kana Komori

Tomomasa Ishida

Masako Mano

Yusuke Takematsu

Daisuke Shimizu

The substrate processing apparatus includes common piping which guides a processing liquid to a branching portion, supply piping which guides the processing liquid from the branching portion to a chemical liquid nozzle, return piping which guides the processing liquid from the branching portion, and a discharge valve which changes a flow rate of the processing liquid supplied from the common piping to the branching portion. The discharge valve makes a valve element stationary at a plurality of positions including a discharge execution position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate larger than a maximum value of a suction flow rate and a discharge stop position at which the processing liquid is supplied from the common piping to the branching portion at a flow rate smaller than the maximum value of the suction flow rate.

Substrate processing apparatus and substrate processing method

A processing liquid supplying apparatus supplies a processing liquid to a processing unit which processes a substrate. The processing liquid supplying apparatus includes a supply pipe to which a processing liquid inside a processing liquid tank that stores the processing liquid is fed and which supplies the processing liquid, which is fed from the processing liquid tank, to the processing unit, a return pipe which is branched and connected to the supply pipe to return a processing liquid inside the supply pipe to the processing liquid tank, a first heating unit which heats a processing liquid inside an upstream-side portion to be heated that is set in the supply pipe upstream from a branched position to which the return pipe is connected, a second heating unit which heats a processing liquid inside a downstream-side portion to be heated that is set in the supply pipe downstream from the branched position, a cooling unit which cools a processing liquid inside a portion to be cooled that is set in the return pipe, and a first filter which is interposed in the supply pipe upstream from the upstream-side portion to be heated and removes particles in a processing liquid.

Processing liquid supplying apparatus, substrate processing apparatus and processing liquid supplying method

A substrate processing method includes a substrate holding step of holding a substrate in which a pattern is defined on one major surface, a charge supply step of supplying a charge of one polarity to the substrate, a first voltage application step of applying, in parallel with the charge supply step, a voltage of the other polarity to a first electrode arranged on the other major surface of the substrate through a dielectric member, a second voltage application step of applying, after the first voltage application step, a voltage of the one polarity to the first electrode while keeping a state where a ground connection of the substrate is released and a drying step of removing, in parallel with the second voltage application step, a liquid from the one major surface of the substrate so as to dry the substrate.

Substrate processing method and substrate processing device

A chemical solution feeder feeds a chemical solution to a predetermined feed target, and includes: a feed flow path that is connected at its one end to a supply source of a chemical solution at room temperature and at its other end to a feed target, to guide the chemical solution to the feed target from the supply source; a first filter that removes particles in a chemical solution at room temperature injected from the supply source into the feed flow path; a heating unit that heats the chemical solution having passed through the first filter; and a second filter that removes particles in the chemical solution at high temperature heated by the heating unit, flowing through the feed flow path toward the feed target, wherein the first filter is a hydrophilic filter and the second filter is a hydrophobic filter.

Chemical solution feeder, substrate treatment apparatus, method for feeding chemical solution, and method for treating substrate

The controller is programmed to cause a low-surface-tension liquid supply unit to supply a liquid film of a low-surface-tension liquid to a front surface of a substrate so as to form a liquid film of the low-surface-tension liquid. The controller is programmed to control the substrate rotating unit and the inert gas supply unit so that an inert gas is supplied toward the rotational center position while rotating the substrate, thereby forming an opening spreading from the rotational center position to be formed in the liquid film, and enlarging the opening in a direction away from the rotational center position, and to control the landing-position changing unit to change the landing position of the low-surface-tension liquid to at least two positions except the rotational center position in accordance with enlargement of the opening so that the landing position is placed outside the peripheral edge of the opening.

A substrate processing method includes a liquid film forming step of forming a liquid film of an organic solvent with which a whole area of an upper surface of a substrate is covered in order to replace a processing liquid existing on the upper surface with an organic solvent liquid, a thin film holding step of thinning the liquid film of the organic solvent by rotating the substrate at a first high rotational speed while keeping surroundings of the whole area of the upper surface in an atmosphere of an organic solvent vapor and holding a resulting thin film of the organic solvent on the upper surface, and a thin-film removing step of removing the thin film from the upper surface after the thin film holding step, and the thin-film removing step includes a high-speed rotation step of rotating the substrate at a second high rotational speed.

Substrate processing method and substrate processing apparatus

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Kyoto, Japan

Shota Iwahata