Kokusai Electric Corporation

Shoma Miyata

Kimihiko Nakatani

Takayuki Waseda

Motomu Degai

Takashi Nakagawa

Yoshitomo Hashimoto

There is provided a technique that includes (a) forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature; (b) heat-treating the film under a second temperature higher than the first temperature; (c) altering the heat-treated film by exposing the heat-treated film to an altering agent; and (d) removing the altered film by exposing the altered film to a removing agent.

Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium

A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.

Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium

Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and recording medium

Growing community of inventors

Toyama, Japan

Shoma Miyata