Powdec K.k.

Shoko Echigoya

Hiroji Kawai

Shuichi Yagi

Fumihiko Nakamura

Souta Matsumoto

Provided are a semiconductor device and a bidirectional field effect transistor which can easily overcome the tradeoff relation between the high voltage resistance and high speed in the semiconductor device using a polarization super junction, realize both the high voltage resistance and elimination of the occurrence of current collapse, operate at a high speed, and further the loss is low. The semiconductor device comprises a polarization super junction region and a p-electrode contact region. The polarization super junction region comprises an undoped GaN layer, an undoped AlGaN layerwith a thickness not smaller than 25 nm and not larger than 47 nm and 0.17&#x2264;x&#x2264;0.35, an undoped GaN layerand a p-type GaN layer. When the reduced thickness tR is defined as tR=u+v(1+w&#xd7;10) for the thickness u [nm] of the undoped GaN layer, the thickness v [nm] and the Mg concentration w [cm] of the p-type GaN layer, tR&#x2265;0.864/(x&#x2212;0.134)+46.0 [nm] is satisfied. The p-electrode contact region comprises a p-type GaN contact layer formed to be in contact with the p-type GaN layerand a p-electrode that is in contact with the p-type GaN contact layer.

Semiconductor device having a polarization super junction field effect transistor, electric equipment, bidirectional field effect transistor, and mounted structure body having the same

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Oyama, Japan

Shoko Echigoya