National Institute for Materials Science

National Institute for Research in Inorganic Materials

Shojiro Komatsu

Yusuke Moriyoshi

Katsuyuki Okada

Toyohiro Chikyo

Takamasa Ishigaki

Nobuo Setaka

Seiichiro Matsumoto

Kawakatsu Yamada

Masatsugu Futaki

Mitsuo Kasamatsu

Yoshiki Shimizu

Based on designs concerning boron nitride thin-films each including boron nitride crystals in acute-ended shapes excellent in field electron emission properties, and designs of emitters adopting such thin-films, it is aimed at appropriately controlling a distribution state of such crystals to thereby provide an emitter having an excellent efficiency and thus requiring only a lower threshold electric field for electron emission. In a design of a boron nitride thin-film emitter comprising crystals that are each represented by a general formula BN, that each include spbonded boron nitride, spbonded boron nitride, or a mixture thereof, and that each exhibit an acute-ended shape excellent in field electron emission property; there is controlled an angle of a substrate relative to a reaction gas flow upon deposition of the emitter from a vapor phase, thereby controlling a distribution state of the crystals over a surface of the thin-film.

Boron nitride thin-film emitter and production method thereof, and electron emitting method using boron nitride thin-film emitter

In an electron emission method, a voltage is applied to a field electron emission element that has a boron nitride material containing crystal, formed on an element substrate to show a conical projection of the boron nitride material and shows a stable electron emitting property in an atmosphere when a voltage is applied thereto to emit electrons. An electron emission threshold of the field electron emission element falls due to formation of a surface electric dipolar layer by bringing it into contact with an operating atmosphere containing polar solvent gas when applying a voltage to the field electron emission element so as to emit electrons.

Field electron emission element, a method of manufacturing the same and a field electron emission method using such an element as well as an emission/display device employing such a field electron emission element and a method of manufacturing the same

The present invention provides a sp3-bonded boron nitride, represented by a general formula BN, having a hexagonal 5H or 6H polytypic form and having a property of emitting light in ultraviolet region. Its producing method comprises: introducing reaction mixed gas containing boron and nitrogen being diluted with dilution gas into a reaction chamber; and irradiating a surface of a substrate placed in the chamber, a growing surface on the substrate, and a growing spacing region about the growing surface with ultraviolet light to cause gas phase reaction, thereby generating, depositing, or growing the boron nitride on the substrate.

Sp3 bond boron nitride emitting light in ultraviolet region, its producing method, and functional material using same

A method of making hard boron nitride by a plasma CVD method employing beam irradiation comprising the steps of: introducing a boron source gas and a nitrogen source gas into a plasma generated by employing a working gas selected from the group consisted of helium, hydrogen and a mixture of these under pressure of 0.01 through 100 torr, said boron source gas and said nitrogen source gas are provided with volumetric percent of 0.01 through 10% with respect to the working gas; transmitting activating innoculations formed in the plasma to a substrate of which temperature is maintained at 300.degree. through 1100.degree. C; converting the activating innoculations into precursor activating innoculations necessary for forming and growing a hard boron nitride film on the substrate by irradiating an ultraviolet beam to the activation innoculations on the substrate; and accumulating the hard boron nitride on the substrate.

Method of making hard boron nitride by a plasma CVD method employing

A method for preparing diamond or diamond-like carbon, which comprises exciting carbon by decomposing, evaporating and dissociating an organic compound or a carbon material in a combustion flame of at least 600.degree. C. of a hydrocarbon, hydrogen or a mixture thereof and oxygen gas or air, mixing thereto hydrogen in an amount of at least one time by volume the amount of carbon, and maintaining the mixture at a temperature of from 600.degree. to 1,700.degree. C. to precipitate diamond or diamond-like carbon.

Growing community of inventors

Tsukuba, Japan

Shojiro Komatsu