Kwansei Gakuin Educational Foundation

Toyo Tanso Co., Ltd.

Shoji Ushio

Tadaaki Kaneko

Noboru Ohtani

Satoru Nogami

Ayumu Adachi

A standard sample () that is a nanometer standard prototype, having a standard length that serves as a length reference, includes a SiC layer in which a step-terrace structure is formed. The height of a step, used as the standard length, is equal to the height of a full unit that corresponds to one periodic of a stack of SiC molecules in a stack direction or equal to the height of a half unit that corresponds to one-half periodic of the stack of SiC molecules in the stack direction. In a microscope such as an STM to be measured in a high-temperature vacuum environment, heating in a vacuum furnace enables surface reconstruction with ordered atomic arrangement, while removing a natural oxide film from the surface, so that accuracy of the height of the step is not degraded. Accordingly, a standard sample usable under a high-temperature vacuum is achieved.

Nanometer standard prototype and method for manufacturing nanometer standard prototype

A method for manufacturing a semiconductor wafer includes a carbon layer formation step, a through hole formation step, a feed layer formation step, and an epitaxial layer formation step. In the carbon layer formation step, a carbon layer () is formed on a surface of a substrate () made of polycrystalline SiC. In the through hole formation step, through holes () are formed in the carbon layer () formed on the substrate (). In the feed layer formation step, a Si layer () and a 3C&#x2014;SiC polycrystalline layer () are formed on a surface of the carbon layer (). In the epitaxial layer formation step, the substrate () is heated so that a seed crystal made of 4H&#x2014;SiC single crystal is formed on portions of the surface of the substrate () that are exposed through the through holes (), and a close-spaced liquid-phase epitaxial growth of the seed crystal is caused to form a 4H&#x2014;SiC single crystal layer.

Growing community of inventors

Sanda, Japan

Shoji Ushio