Sony Corporation

Shoji Terada

Hiroaki Ono

Atsushi Matsuzono

Satoshi Sasaki

Yuichi Iwase

Eiji Makino

Isao Kamiyama

Hitoshi Tamashiro

Shigehisa Ohkawara

A method of manufacturing a display unit capable of manufacturing a large-screen display unit with high display quality without upsizing manufacturing facilities is provided. Device substrates on which a pixel including the organic light-emitting devices is formed are aligned on the same plane so as to face a sealing substrate. While the device substrates and the sealing substrate are bonded together with an adhesive resin for sealing in between, the adhesive resin for sealing is extruded from a seam portion to the backside of the seam portion so as to fill the seam portion with the adhesive resin for sealing. The backside of the seam portion can be securely sealed through a simple step. The method is suitable for a large-scale display unit using top-emitting organic light-emitting devices. A back sealing member may be disposed on the backside of the seam portion with the extruded adhesive resin for sealing in between. After that, the adhesive resin for sealing is cured.

Method of manufacturing display unit wherein sealing material is extruded from a seam portion between plurality of device substrates

A support substrate having the same size as a device substrate provided with alignment marks is disposed opposite to and adhered to the back side of the device substrate. At least the face side of the device substrate on the support substrate is cut at division lines along a functional region. An organic film is formed on the functional region of the device substrate thus cut. The support substrate is cut along the functional region of the device substrate, thereby removing peripheral portions of the support substrate and the device substrate, to form a display panel. Positioning of the substrate relative to a manufacturing apparatus for each step can be performed with high accuracy, in the manufacturing process including a step of cutting the substrate to a smaller size in the course of manufacture.

Method of manufacturing display apparatus

A giant magneto-resistive effect element includes a laminated layer film having a ferromagnetic film, a non-magnetic film and an anti-ferromagnetic film. A current is caused to flow in the direction perpendicular to the film plane of the laminated layer film by upper and lower electrodes. Hard magnetic films are directly connected to both sides in the width direction of the laminated layer film. Insulating films are formed above or under the hard magnetic films. A current path between the upper electrodes or the lower electrodes and the laminated layer film is restricted by an opening defined between the insulating layers at both sides. The hard magnetic films have a specific resistance substantially the same as or larger than that of the laminated layer film. Further, there are provided a magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor including the above-mentioned giant magneto-resistive effect element.

GIANT MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SMALL LEAKAGE CURRENT, MAGNETO-RESISTIVE EFFECTIVE TYPE HEAD HAVING SMALL-LEAKAGE CURRENT, THIN-FILM MAGNETIC MEMORY HAVING SMALL LEAKAGE CURRENT AND THIN-FILM MAGNETIC SENSOR HAVING SMALL LEAKAGE CURRENT

A giant magneto-resistive effect element ( ) comprises a lamination layer film ( ) including a ferromagnetic film and wherein a nonmagnetic film and an antiferromagnetic film, the ferromagnetic film includes a magnetization free layer ( ) and a magnetization fixed layer, a current is restricted by an upper electrode and a lower electrode in such a manner that the current may flow in the direction perpendicular to the film plane of the lamination layer film ( ), the lamination layer film ( ) is laminated including a high-resistance layer ( ), a hard magnetic film ( ) made of a conductive hard magnetic material and an insulating layer ( ) are directly bonded to respective outsides of this lamination layer film ( ) along its width direction and this hard magnetic film ( ) is shifted from the high-resistance layer ( ) and bonded near the magnetization free layer ( ). A magneto-resistive effect type head, a thin-film magnetic memory and a thin-film magnetic sensor include the giant magneto-resistive effect element ( ). The giant magneto-resistive effect element can obtain a high output, a high resistance and is able to cope with high recording density. Also, the magneto-resistive effect head, the thin-film magnetic memory and the thin-film magnetic sensor may include this giant magneto-resistive effect element.

Giant magneto-resistive effect element, magneto-resistive effect type head, thin-film magnetic memory and thin-film magnetic sensor

The track width of the upper layer pole of a thin film magnetic head is formed with an enhanced level of precision. A plating underlay film is formed on a sixth non-magnetic layer and then an upper layer pole is formed thereon by means of a frame plating technique. Then, a first resist film is formed on one of the opposite lateral sides of the upper layer pole and an etching operation is conducted on the upper layer pole . Thereafter, the first resist film is removed and a second resist film is formed on the other lateral side and a similar etching operation is conducted on the upper layer pole

Growing community of inventors

Kanagawa, Japan

Shoji Terada