Mitsubishi Electric Corporation

Furuya Metal Co., Ltd.

Kao Corporation

Daiwa Seiko, Inc.

Shoji Saito

Khalid Hassan Hussein

Tomohiro Maruko

Tomoaki Miyazawa

Koichi Ushijima

Takeshi Omaru

Hideo Komo

Kensuke Morita

Atsushi Ito

Yasuhiro Sato

Yoshiaki Fujikura

Nobuo Kikuchi

Yoshikazu Tsunoda

Yu Suzuki

Shintaro Araki

Arata Iizuka

Hiroshi Abe

Yuki Hata

Korehide Okamoto

Yoshihiro Hasegawa

Ryoji Murai

Yuichi Iwamoto

Osamu Yamashita

Seiichiro Inokuchi

Koichi Taguchi

Katsuji Ando

Toshiyuki Kumagai

Yuki Nakazawa

Katsuhiko Kondo

Amiko Ito

Takatoshi Yasui

Yuya Okawa

Yoshiteru Arai

Takuya Shiratsuru

Yusuke Takaishi

Misato Sawaguchi

Daishi Kaneko

Eiji Matsumoto

In a semiconductor device, a frame includes a first frame portion extending in a direction parallel to a connection surface to be connected to the connection surface and a second frame portion connecting a case and the first frame portion. The first frame portions are divided into a plurality of divided portions. At least one divided portion in the plurality of divided portions in the first frame portions is an elastic portion which can be elastically deformed from a first state where a tip end portion is inclined to be located on a lower side of the connection surface to a second state where the tip end portion extends in a direction parallel to the connection surface. The divided portion as the elastic portion is connected to the connection surface while being elastically deformed from the first state to the second state.

Semiconductor device and method of manufacturing semiconductor device

The volatilization suppressing component according to the present disclosure has a metallic base material; and a laminated film having at least a first layer formed on a portion or the entirety of a surface of the metallic base material, and a second layer formed on the first layer, wherein the first layer is an adhesive layer between the metallic base material and the second layer, and the second layer is a protective layer for the first layer.

Volatilization suppressing component, and method for manufacturing same

A control unit () generates a control signal. A switching device () performs switching according to the control signal and generates a primary side input voltage from a supply voltage. A transformer () converts the primary side input voltage to a secondary side output voltage. A drive circuit () drives a power device () according to the secondary side output voltage. The control unit () includes a table listing a correspondence relationship between supply voltages and set values of control signals for obtaining a desired secondary side output voltage, refers to the table and generates the control signal having a set value corresponding to the supply voltage.

Power device drive apparatus and method for manufacturing the same

Provided is a musk-like composition that is excellent in harmony with various other fragrances and that can create a distinctive fragrance effect when blended. The composition includes a compound represented by General Formula (I). The ratio of an E-isomer of the compound represented by General Formula (I) to a Z-isomer of the compound represented by General Formula (I) is E-isomer/Z-isomer=3/7 or more and 7/3 or less. 

Musk-like composition

A semiconductor apparatus includes a metal base plate, an upper surface ceramic substrate provided on an upper surface of the metal base plate, a semiconductor device provided on the upper surface ceramic substrate, and a substrate that is provided in the metal base plate and includes an embedded ceramic substrate, an upper surface metal pattern provided on an upper surface of the embedded ceramic substrate, and a lower surface metal pattern provided on a lower surface of the embedded ceramic substrate, wherein a thermal conductivity of the upper surface metal pattern and a thermal conductivity of the lower surface metal pattern are larger than a thermal conductivity of the metal base plate.

Semiconductor apparatus

A thermocouple capable of preventing a decrease in strength of a temperature measuring junction portion while maintaining temperature responsiveness and productivity in comparison with a conventional thermocouple. A thermocouple including two wires and a clamping member, the clamping member clamping the two wires while distal end portions of the wires being in contact with each other in parallel to provide a temperature measuring junction portion, in which when it is assumed that diameters of the two wires are d1 and d2 (where d1&#x2265;d2) respectively; a length of the temperature measuring junction portion in a longitudinal direction of the two wires is L; a maximum width of the temperature measuring junction portion in a parallel direction of the two wires is D; and a maximum width in a direction orthogonal to the parallel direction in a cross section of the temperature measuring junction portion is E, the following equations are satisfied:0.5&#xd7;(1+2)&#x2264;&#x2264;5&#xd7;(1+2)&#x2003;&#x2003;Equation (1)1&#xd7;(1+2)&#x3c;&#x2264;5&#xd7;(1+2)&#x2003;&#x2003;Equation (2)1.4&#xd7;1&#x3c;&#x2264;8&#xd7;1.&#x2003;&#x2003;Equation (3)

Thermocouple

An object is to provide a semiconductor cooling device which optimally keeps the mixing amount of microbubbles in the refrigerant and prevents the reduction of the cooling effect of the semiconductor module. The semiconductor cooling device includes a refrigerant circulation path through which refrigerant circulates, a heat exchanger provided on the refrigerant circulation path on which a semiconductor module is installable and configured to exchange heat between the refrigerant and the semiconductor module, a microbubble generator provided on the refrigerant circulation path, and configured to generate microbubbles in the refrigerant, a controller configured to control the microbubble generator, and a refrigerant sensor configured to measure a temperature, a flow rate, a flow velocity, or a pressure of the refrigerant circulating in the refrigerant circulation path. The controller is configured to control the microbubble generator based on a measurement result measured by the refrigerant sensor to control the generation amount of microbubbles.

Semiconductor cooling device, power control system and travelling body including a semiconductor colling device with microbubble generator

A current detection circuit () detects a device current flowing in the semiconductor device (). A voltage detection circuit () detects a device voltage applied to the semiconductor device (). A temperature calculation device () has a table collecting device temperatures of the semiconductor device () respectively corresponding to plural collector currents and plural collector voltages, and reads out a device temperature corresponding to the device current detected by the current detection circuit () and the device voltage detected by the voltage detection circuit () from the table.

The mold device according to the present invention is a mold device to resin-seal the semiconductor device including an insert electrode, and in the semiconductor device, the insert electrode is provided with an insert hole, a nut having a screw hole is disposed in the insert electrode so that the insert hole and the screw hole communicate with each other, the mold device includes a mold body into which resin is injected to resin-seal the semiconductor device, including a side of the insert electrode where the nut is disposed, and a rod-like member that is inserted into the insert hole, and the rod-like member is inserted into the screw hole of the nut through the insert hole of the insert electrode to draw the nut to the side of the insert electrode.

Mold device

Method of producing a target having a small average crystal grain size of gold or platinum and having a uniform crystal grain size in an in-plane direction of a target surface and a thickness direction of the target in order to further stabilize film deposition characteristics during sputtering. The method for producing a gold or platinum target includes an ingot production step for casting molten gold or platinum to obtain an ingot; a primary forging step for forging the ingot in a first temperature range; a step for cooling the primary forged ingot to a second temperature range lower than the first temperature range; a secondary forging step for determining six directions for the cooled primary forged ingot and further forging the cooled primary forged ingot from the six directions in the second temperature range; a cross-rolling processing step for adjusting the temperature of the secondary forged ingot to a third temperature range and subjecting the secondary forged ingot to cross-rolling processing to form the secondary forged ingot into a target shape; and a heat treatment step for heat-treating the target-shaped ingot in a fourth temperature range.

Gold or platinum target, and production method for same

A thermocouple that can stably perform direct temperature measurement under a high temperature environment (1500&#xb0; C. or higher but 2300&#xb0; C. or lower) and a manufacturing method for the same. A thermocouple according to a first embodiment is a thermocouple including at least a protective tube and element wires, the protective tube and the element wires are insulated from one another by an insulator, and the insulator is either one or both of a powder and a compact, and is composed of at least one of a zirconium oxide, a hafnium oxide, or a composite oxide of zirconium and hafnium.

Thermocouple and manufacturing method for same

A platinum wire in which crystal grain growth is slowed in order to prevent damage caused by creep without dispersing a metal oxide, and occurrence of slip at crystal grain boundaries is slowed. A platinum thermocouple wire that is used in a negative electrode of a platinum-based thermocouple and has a nitrogen mass concentration of 10 to 100 ppm, and when structure observation of the cross section of the wire in a longitudinal direction is performed, a structure is observed in which there is a plurality of crystal grains, which have an aspect ratio {(length of major axis)/(length of minor axis perpendicular to major axis)} of 5 or more and elongate in the longitudinal direction of the wire, in a wire thickness direction.

Platinum thermocouple wire

A semiconductor module having a plurality of cooling fins and a fixing cooling fin longer than the plurality of cooling fins, the fixing cooling fin having a threaded hole provided in distal end portion thereof, a cooling jacket having a cooling medium passage in which the plurality of cooling fins and the fixing cooling fin are housed, and an opening formed so as to enable a screw to be inserted in the threaded hole, and a screw passed through the opening to be inserted in the threaded hole, the cooling jacket being fixed to the semiconductor module with the screw are provided.

Semiconductor device and semiconductor module having cooling fins

A semiconductor device of the present invention includes a semiconductor element having an upper surface and a lower surface, a metal plate thermally connected to the lower surface, an upper surface electrode soldered to the upper surface, an insulating sheet formed on the upper surface electrode so as to be in surface contact with the upper surface electrode, a shielding plate formed on the insulating sheet so as to be in surface contact with the insulating sheet, the shielding plate shielding against radiation noise, and a resin with which the semiconductor element is covered, while a portion of the upper surface electrode, a portion of the shielding plate and a lower surface of the metal plate are exposed to the outside, wherein the heat conductivity of the insulating sheet is higher than the heat conductivity of the resin.

Growing community of inventors

Tokyo, Japan

Shoji Saito