Noritz Corporation

Renesas Technology Corp.

Mitsubishi Denki Kabushiki Kaisha

Shoji Okuda

Koji Nii

Hideyuki Fujisawa

Naoki Se

Masaki Kondo

Nobuhiro Tsuda

Taihei Terasawa

A metal bend pipe having a bend portion bent in a semi-circular arc shape is provided, in which an identification part that enables one of the two end portions of the bend portion to be identified as the bending-start side or the bending-end side is provided, and the identification part is integrally formed as a protruding and/or recessed three-dimensional region. Thus, it is possible to easily and reliably identify which of the two end portions of the bend portion is the bending-start side or the bending-end side.

Bend pipe and method for manufacturing same

A heat exchanger includes a tube expansion portion formed by expanding a heat transfer tube so that an outer peripheral surface of the heat transfer tube is pressed against an inner peripheral surface of a hole provided in a side wall portion of a case. The tube expansion portion includes first and second bulge portions positioned respectively on the inside and the outside of the side wall portion so as to sandwich the side wall portion in an axial length direction of the heat transfer tube and configured such that respective outer peripheral surfaces thereof partially bulge outward in a radial direction of the heat transfer tube, an end portion tip end of the heat transfer tube is positioned apart from the second bulge portion, and the end portion tip end and a part in the vicinity thereof are expanded so as to be included in a part of the tube expansion portion. Thus, effects such as improving the precision with which the side wall portion of the case, the heat transfer tube, and a connecting tube are fitted to each other can be achieved, and as a result, the respective parts can be brazed easily and appropriately.

Heat exchanger and manufacturing method therefor

A heat transfer tube of a heat exchanger is provided with a first and a second annular convex portions of which outer diameters are partially expanded. The first annular convex portion is positioned on an inner face side of a side plate portion of a case of the heat exchanger and is engaged with a circumferential edge portion of a first hole portion provided for the side plate portion, or the first annular convex portion contacts under pressure with an inner circumferential face of the first hole portion. The second annular convex portion is positioned on an outer face side of a header constituting member and is engaged with a circumferential edge portion of a second hole portion. Thus the side plate portion, the heat transfer tube, and a header are relatively fixed by a simple means.

Heat exchanger and production method of the heat exchanger

In the semiconductor storage device, a dummy P+ diffusion region which does not contribute to a storage operation is formed in the vicinity of two P+ diffusion regions constituting a storage node. Moreover, a dummy N+ diffusion region which does not contribute to the storage operation is formed in the vicinity of N+ diffusion regions FLand FLconstituting a storage node. Consequently, a part of electrons generated in a P well region PW by irradiation of &#x3b1; rays or neutron rays can be collected into the dummy N+ diffusion region FL, and a part of holes generated in an N well region NW by the irradiation of the &#x3b1; rays or the neutron rays can be collected into the dummy P+ diffusion region FL

Semiconductor memory device

A memory device that consumes no wasteful power in selecting memory cells and achieves high operating speed and size and cost reductions, is provided. In reading of memory cell information, only a single memory cell in a single local block is activated through a read word line. Specifically, AND circuits are provided in correspondence with all memory cells. Each AND circuit receives as its inputs a block select signal for selecting one of the local blocks and an in-block memory cell select signal for selecting one of the memory cells in each local block in a common manner among the local blocks. The outputs from the AND circuits are applied to read word lines. Unselected memory cells are not activated and therefore no current flows from those memory cells to local read bit lines, thereby preventing wasteful power consumption.

Memory device for activating one cell by specifying block and memory cell in the block

A semiconductor memory includes a first inverter, a second inverter and a read circuit. The first inverter has its input terminal connected to a first memory node and its output terminal connected to a second memory node. The second inverter is connected in anti-parallel with the first inverter, that is, has its input terminal connected to the second memory node and its output terminal connected to the first memory node. The read circuit includes a first transistor having its gate connected to the first memory node, a second transistor having its gate connected to the second memory node, and a third transistor for connecting the drain of the first transistor and that of the second transistor to a read bit line. The semiconductor memory can improve its soft error resistance without increasing the number of steps of the manufacturing process.

Growing community of inventors

Hyogo, Japan

Shoji Okuda