Canon Kabushiki Kaisha

Other

Fujifilm Corporation

Shoji Nishida

Katsumi Nakagawa

Takao Yonehara

Kiyofumi Sakaguchi

Masaki Mizutani

Masaaki Iwane

Noritaka Ukiyo

Takehito Yoshino

Yukiko Iwasaki

Tatsumi Shoji

Tetsuro Saito

Makoto Iwakami

Nobuhiko Sato

Kenji Yamagata

Hajime Ikeda

Kazuya Notsu

Hiroshi Sato

Shunichi Ishihara

Kazuaki Ohmi

Naofumi Aoki

Yasuyoshi Takai

Kazutaka Yanagita

Isao Tanikawa

Takehiko Yoshino

A solution jetting device includes: a cylindrical member; a movable member that is movably fitted to a hollow portion of the cylindrical member; a first drive mechanism that moves the movable member; a first flow passage that connects a solution container, in which a solution containing a biological sample or containing a reagent to be reacted with a biological sample is contained, to the hollow portion; an openable and closable first on-off valve that is provided on the first flow passage; a jetting tool that jets the solution to an objective region; a second flow passage that connects the hollow portion to the jetting tool; an openable and closable second on-off valve that is provided on the second flow passage; a second drive mechanism as defined herein; and a control unit as defined herein.

Solution jetting device and method of controlling jet of solution

The following method is provided: a method of readily fabricating an electron-emitting device, coated with a low-work function material, having good electron-emitting properties with high reproducibility such that differences in electron-emitting properties between electron-emitting devices are reduced. Before a structure is coated with the low-work function material, a metal oxide layer is formed on the structure.

Method of fabricating electron-emitting device and method of manufacturing image display apparatus

An electron-emitting device includes an electroconductive member and a lanthanum boride layer on the electroconductive member and further includes an oxide layer between the electroconductive member and the lanthanum boride layer. The oxide layer can contain a lanthanum element. The lanthanum boride layer can be overlaid with a lanthanum oxide layer.

Electron-emitting device and display panel including the same

An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

Semiconductor member, manufacturing method thereof, and semiconductor device

A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.

Semiconductor substrate and manufacturing method for the same

A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a raw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

Liquid-phase growth apparatus and method

A liquid-phase growth apparatus for growing a crystal on a substrate includes a crucible containing a solution that contains a taw material for forming the crystal, and a substrate holder for vertically holding the substrate. The substrate holder includes connectors, a receiving component, and a push component. The receiving component and the push component are opposite to each other and are connected by the connectors. The push component holds an upper portion of the substrate while the receiving component holds a lower portion of the substrate. The substrate holder containing the vertically held substrate is dipped into the solution. The receiving component ascends with buoyancy in the solution contained in the crucible, so that the substrate is now held securely and prevented from cracking due to thermal expansion.

A solar cell is produced by dipping a multicrystalline silicon substratein a solutioncontaining silicon, growing a silicon layer on the substratewhile decreasing with time the temperature drop rate of the solution during the dipping of the substrate in the solution, and forming a pn junction in the silicon layer. Thereby, there is provided a silicon layer production method that can form a thick layer while restraining the degree of roughness, whereby a low-cost, multicrystalline-silicon solar cell production method is provided that realizes both a large current and a high FF.

Silicon layer production method and solar cell production method

An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain induction porous layer or a porous silicon layer and strain induction porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain induction porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.

There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidificationis cut such that a normal line of a principal surfaceof a multicrystalline silicon substrateis substantially perpendicular to a longitudinal direction of crystal grainsof the multicrystalline silicon ingot made by directional solidification

Process of producing multicrystalline silicon substrate and solar cell

With respect to a liquid phase growth method for a silicon crystal in which the silicon crystal is grown on a substrate by immersing the substrate in a solvent or allowing the substrate to contact the solvent, a gas containing a raw material and/or a dopant is supplied to the solvent after at least a part of the gas is decomposed by application of energy thereto. In this manner, a liquid phase growth method for a silicon crystal, the method capable of achieving continuous growth and suitable for mass production, a manufacturing method for a solar cell and a liquid phase growth apparatus for a silicon crystal are provided.

Liquid phase growth method for silicon crystal, manufacturing method for solar cell and liquid phase growth apparatus for silicon crystal

A process for producing a single crystal silicon wafer, comprising the steps of forming a porous layer on a single crystal silicon substrate comprising a silicon whose concentration of mass number 28 silicon isotope is less than 92.5% on an average; dissolving a starting silicon whose concentration of mass number 28 silicone isotope whose mass number is more than 98% on an average in a melt for liquid-phase epitaxy until said starting silicon becomes to be a supersaturated state in said melt under reductive atmosphere maintained at high temperature: immersing said single crystal silicon substrate in said melt to grow a single crystal silicon layer on the surface of said porous layer of said single crystal silicon substrate; and peeling said single crystal silicon layer from a portion of said porous layer.

Process for producing single crystal silicon wafers

A liquid-phase growth process for continuously growing a crystal film on a plurality of substrates with respect to their one side surfaces, characterized in that said plurality of substrates are kept afloat on the surface of a flowing solution for liquid-phase epitaxy which comprises a crystallizing material dissolved in a solvent in a supersaturated state and which is flowing in a solution flow passage, and while said plurality of substrates being moved by virtue of said flowing solution in said solution flow passage, a crystal film is grown on the surfaces of said plurality of substrates which are in contact with said flowing solution. A liquid-phase growth apparatus suitable for practicing said liquid-phase growth process.

Liquid-phase growth process and liquid-phase growth apparatus

In a liquid phase growth process comprising immersing a substrate in a melt held in a crucible, a crystal material having been dissolved in the melt, and growing a crystal on the substrate, at least a group of substrates to be immersed in the melt held in the crucible are fitted to the supporting rack at a position set aside from the center of rotation of the crucible or supporting rack, and the crystal is grown on the surface of the substrate thus disposed. This can provide a liquid phase growth process which can attain a high growth rate, can enjoy uniform distribution of growth rate in each substrate and between the substrates even when substrates are set in a large number in one batch, and can readily keep the melt from reaction and contamination even when the system has a large size, and provide a liquid phase growth system suited for carrying out the process.

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Hiratsuka, Japan

Shoji Nishida