Denso Corporation

Toyota Jidosha Kabushiki Kaisha

Kabushiki Kaisha Toyota Chuo Kenkyusho

Shoji Mizuno

Sachiko Aoi

Takashi Nakano

Yoshiyuki Hattori

Takaaki Aoki

Makoto Kuwahara

Yukihiko Watanabe

Jun Sakakibara

Nozomu Akagi

Yuichi Takeuchi

Shigeki Takahashi

Kyoko Okada

Hirotaka Saikaku

Tetsuo Fujii

Tsuyoshi Yamamoto

Masahiro Sugimoto

Jun Saito

Hitoshi Yamaguchi

Akitaka Soeno

Hidefumi Takaya

Masakiyo Sumitomo

Nobumasa Ueda

Hiroaki Himi

Yoshiaki Nakayama

Rie Taguchi

Kenji Ito

Katsumi Suzuki

Hiroshi Fujimoto

Hiroyuki Ban

Narumasa Soejima

Hiroshi Maeda

Hiroshi Imai

Mitsuhiro Saitou

Takuya Okuno

Toshio Sakakibara

Tsutomu Uesugi

Satoshi Shiraki

Tetsu Kachi

Shinichiro Miyahara

Makio Iida

Akira Yamada

Kazuyoshi Tomita

Yutaka Tomatsu

Shinichi Hoshi

Tomofusa Shiga

Yasuhiro Kitamura

Atsushi Onogi

Tomoo Morino

Kimimori Hamada

Akira Tai

Seigo Oosawa

Tomohiro Mimura

Takashi Kanemura

Shoji Ozoe

Toshitaka Kanemaru

Kenji Kohno

Norihiro Togawa

A silicon carbide semiconductor device includes: an element isolation layer and an electric field relaxation layer. The element isolation layer is arranged, from the surface of a base region to be deeper than the base region, between a main cell region and a sense cell region, and isolates the main cell region from the sense cell region. The electric field relaxation layer is arranged from a bottom of the base region to be deeper than the element isolation layer. The electric field relaxation layer is divided into a main cell region portion and a sense cell region portion. At least a part of the element isolation layer is arranged inside of a division portion of the electric field relaxation layer.

Silicon carbide semiconductor device

A method of manufacturing a semiconductor device is provided with: implanting charged particles including oxygen into a surface of a SiC wafer; and forming a Schottky electrode that makes Schottky contact with the SiC wafer on the surface after the implantation of the charged particles.

Method of manufacturing semiconductor device

A silicon carbide semiconductor device includes: a substrate; a drift layer over the substrate; a base region over the drift layer; multiple source regions over an upper layer portion of the base region; a contact region over the upper layer portion of the base region between opposing source regions; multiple trenches from a surface of each source region to a depth deeper than the base region; a gate electrode on a gate insulating film in each trench; a source electrode electrically connected to the source regions and the contact region; a drain electrode over a rear surface of the substrate; and multiple electric field relaxation layers in the drift layer between adjacent trenches. Each electric field relaxation layer includes: a first region at a position deeper than the trenches; and a second region from a surface of the drift layer to the first region.

Silicon carbide semiconductor device and method for manufacturing same

A method for manufacturing an insulated gate switching device is provided. The method includes: forming a first trench in a surface of a first SiC semiconductor layer; implanting p-type impurities into a bottom surface of the first trench; depositing a second SiC semiconductor layer on an inner surface of the first trench to form a second trench; and forming a gate insulating layer, a gate electrode, a first region and a body region so that the gate insulating layer covers an inner surface of the second trench, the gate electrode is located in the second trench, the first region is of n-type and in contact with the gate insulating layer, the body region is of p-type, separated from the implanted region, and in contact with the gate insulating layer under the first region.

Insulated gate switching device and method for manufacturing the same

A semiconductor device includes: a drain region made of a first or second conductivity type semiconductors; a drift layer made of the first conductivity type semiconductor; a base region made of the second conductivity type semiconductor; a source region made of the first conductivity type semiconductor with higher concentration; a contact region made of the second conductivity semiconductor with higher concentration; a trench gate structure having upper and lower gate structures; a source electrode connected to the source and contact regions; and a drain electrode at a rear side of the drain region. The upper gate structure is inside the trench at an upper side, and includes a first gate insulation film and a first gate electrode. The lower gate structure is inside the trench at a lower side, and includes a second gate insulation film made of higher dielectric insulation material and a second gate electrode.

Semiconductor device

A semiconductor device is provided with a semiconductor substrate and a trench gate. The semiconductor substrate is provided with a drift region of a first conductive type, wherein the drift region is in contact with the trench gate; a body region of a second conductive type, wherein the body region is disposed above the drift region and is in contact with the trench gate; a source region of the first conductive type, wherein the source region is disposed above the body region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate; and a front surface region of the second conductive type, wherein the front surface region is disposed above the source region, exposed on the front surface of the semiconductor substrate and is in contact with the trench gate.

Semiconductor device with opposite conductivity-type impurity regions between source and trench gate for reducing leakage

A method for manufacturing a SiC semiconductor device includes: forming recesses to be separated from each other on a cross section in parallel to a surface of the substrate by partially removing a top portion of the drift layer with etching using a mask after arranging the mask on a front surface of a drift layer; forming electric field relaxation layers having the second conductivity type to be separated from each other on the cross section by ion-implanting a second conductivity type impurity on a bottom of each recess using the mask; and forming a channel layer by forming a second conductivity type layer on the front surface of the drift layer including a front surface of each electric field relaxation layer in a respective recess.

Method for manufacturing silicon carbide semiconductor device

A semiconductor device may include a semiconductor substrate in which a semiconductor element is provided, and an insulation film provided on the semiconductor substrate, in which the semiconductor substrate may include a first portion and a second portion which has a thickness thinner than a thickness of the first portion, an upper surface of the second portion may be positioned lower than an upper surface of the first portion, a recess extending in a thickness direction of the semiconductor substrate may be provided on the upper surface of the second portion located at a position where the first portion and the second portion adjoin to each other, and the insulation film may extend over from the first portion to the second portion, and fill the recess.

Semiconductor device with suppressed decrease in breakdown voltage of an insulation film and manufacturing method of the same

A semiconductor device includes a HEMT and a diode. The HEMT includes: a substrate having a GaN layer as a channel layer generating a two-dimensional electron gas and an AlGaN layer as a barrier layer on the GaN layer; a source electrode on the AlGaN layer ohmic contacting the AlGaN layer; a drain electrode on the AlGaN layer apart from the source electrode and ohmic contacting the AlGaN layer; an inter-layer insulating film on the AlGaN layer between the source electrode and the drain electrode; and a gate electrode on the inter-layer insulating film. The substrate includes an active layer region generating the two dimensional electron gas in the GaN layer. The diode includes an anode electrically connected to the gate electrode and a cathode electrically connected to the drain electrode.

Semiconductor device with high electron mobility transistor

A method of manufacturing a semiconductor device includes: forming a first trench in a first area of a drift layer that has a surface including the first area and a second area; growing a crystal of a p-type base layer on a surface of the drift layer after forming the first trench; and growing a crystal of an n-type source layer on a surface of the base layer. Material of the drift layer, the base layer, and the source layer are a wide-gap semiconductor.

A semiconductor device includes a termination trench surrounding a region in which a plurality of gate trenches is provided; a p-type lower end region being in contact with a lower end of the termination trench; a p-type outer circumference region being in contact with the termination trench from an outer circumferential side and exposed on a surface of the semiconductor device; a plurality of guard ring regions of a p-type provided on an outer circumferential side of the p-type outer circumference region and exposed on the surface; and an n-type outer circumference region separating the p-type outer circumference region from the guard ring regions and separating the guard ring regions from each another.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

Semiconductor device having switching element and free wheel diode and method for controlling the same

A semiconductor device includes: a semiconductor substrate; an interlayer film on the substrate; a surface electrode on the interlayer film; a surface pad on the surface electrode; a backside electrode on the substrate; an element area including a cell portion having a vertical semiconductor element and a removal portion having multiple contact regions; and an outer periphery area. The surface electrode in the removal portion is electrically coupled with each contact region through a first contact hole in the interlayer film. The surface electrode in the cell portion is electrically coupled with the substrate through a second contact hole in the interlayer film. A part of the surface electrode in the removal portion facing each contact region is defined as a contact portion. The surface electrode includes multiple notches on a shortest distance line segment between each contact portion and the surface pad.

Semiconductor device and method for manufacturing the same

A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

Driving circuit for driving transistor based on control current

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Okazaki, Japan

Shoji Mizuno