Other

Japan Science and Technology Agency

Matsushita Electric Industrial Co., Ltd.

Denso Corporation

Japan Science and Technology Corporation

Shoji Miyake

Yuichi Setsuhara

Tatsuo Shoji

Akinori Ebe

Kiyoyuki Morita

Michihito Ueda

Takashi Ohtsuka

Takashi Nishikawa

Yoshiaki Nishijima

Yasuyoshi Suzuki

Yurio Nomura

Yukio Makino

Teppei Satoh

The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennas are located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennas in parallel via a plate-shaped conductor. The length of the conductor of each antenna is shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductor improves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Plasma generator, plasma control method and method of producing substrate

The present invention aims to provide a plasma generator capable of creating a spatially uniform distribution of high-density plasma. This object is achieved by the following construction. Multiple antennasare located on the sidewall of a vacuum chamber, and a RF power source is connected to three or four antennasin parallel via a plate-shaped conductor. The length of the conductor of each antennais shorter than the quarter wavelength of the induction electromagnetic wave generated within the vacuum chamber. Setting the length of the conductor of the antenna in such a manner prevents the occurrence of a standing wave and thereby maintains the uniformity of the plasma within the vacuum chamber. In addition, the plate-shaped conductorimproves the heat-releasing efficiency, which also contributes to the suppression of the impedance.

Plasma generator, plasma control method, and method of producing substrate

The invention provides a method for preparing a soft magnetic material which meets demands for low iron loss, high density, high strength and high productivity. The method comprises a surface oxidation step of forming oxide films on the surfaces of a soft magnetic powder, a step of preparing a molding compound of the soft magnetic powder by mixing a soft magnetic powder and a binder with a predetermined blending ratio, a press molding step of press-molding the molding compound of the soft magnetic powder into a predetermined shape, and a sintering step of sintering the press-molded soft magnetic powder to produce a soft magnetic material, wherein a millimeter wave sintering apparatus or a discharge plasma sintering apparatus is used as a heating means in the surface oxidation step or in the sintering step. Thereby, energy of millimeter waves or discharge plasma acts locally on oxidized surface portions having a large electric resistance of the soft magnetic powder, the surfaces of the soft magnetic powder are locally heated at a temperature near the melting point, and oxidation of the surfaces of the soft magnetic powder (formation of an oxide film) and sintering (diffusional joining between oxide films) are promoted.

Method for producing a soft magnetic material

The whole antenna conductor is housed in the interior of a vacuum container of a plasma generator thereby to eliminate the need for an insulating partition or a top plate so that the whole induction field radiated from the antenna can be effectively utilized. Furthermore, the occurrence of abnormal discharge is suppressed to stabilize a high-density plasma by reducing the inductance of the antenna and covering the antenna conductor with an insulator.

Plasma generator

A silicon oxide film, a Pt film, a Ti filmand a PZT filmare deposited in this order over a Si substrate. The Si substrateis placed in a chamberso that the PZT filmis irradiated with an EHF wave. The irradiation with the EHF wave locally heats a dielectric film such as the PZT film. As a result, it is possible to improve, for example, the leakage property of the dielectric film without adversely affecting a device formed on the Si substrate

Semiconductor device and method for fabricating the same

Growing community of inventors

Suita, Japan

Shoji Miyake