Hitachi, Ltd.

Renesas Technology Corp.

Hitachi Displays, Ltd.

Shoji Asaka

Junji Noguchi

Hiroyuki Maruyama

Naohumi Ohashi

Nobuhiro Konishi

Hideaki Yamamoto

Masahiro Yamada

Yoichi Takahara

Tomoaki Takahashi

Noriyuki Ohroku

Hiroshi Kawanago

A cleaning apparatus according to the present invention is provided with a brush drive mechanism which brings a brush being rotating closer to a substrate, measures electrical potentials generated on a plurality of conductor patterns formed on the substrate, by a contact and separation with/from tips of scrub materials of the brush being rotating, and controls a positioning of the brush by use of the measurement results. With the process as described above, it is possible to treat uniformly a surface to-be-cleaned for a large-sized substrate, with the cleaning brush. Consequently, it is possible to form a highly qualified transistor for liquid crystal display on the substrate having been cleaned, with enhancing yield.

Surface treatment apparatus and method for manufacturing liquid crystal display device

The copper interconnect formed by the use of a damascene technique is improved in dielectric breakdown strength (reliability). During post-CMP cleaning, alkali cleaning, a deoxidizing process due to hydrogen annealing or the like, and acid cleaning are carried out in this order. After the post-CMP cleaning and before forming an insulation film for a cap film, hydrogen plasma and ammonia plasma processes are carried out on the semiconductor substrate. In this way, a copper-based buried interconnect is formed in an interlayer insulation film structured of an insulation material having a low dielectric constant.

Fabrication method of semiconductor integrated circuit device

Growing community of inventors

Hanno, Japan

Shoji Asaka