Shin-Etsu Chemical Co., Ltd.

Shin-Etsu Handotai Co., Ltd.

Massachusetts Institute of Technology

Cusic Inc.

National Institute of Advanced Industrial Science and Technology

Shin-Etsu Chemical C O., Ltd.

Shoji Akiyama

Yoshihiro Kubota

Makoto Kawai

Atsuo Ito

Yuuji Tobisaka

Koichi Tanaka

Yuji Tobisaka

Norihiro Kobayashi

Kouichi Tanaka

Masaro Tamatsuka

Masayuki Tanno

Hiroyuki Nagasawa

Kazumi Wada

Kazutoshi Nagata

Lionel Cooper Kimerling

Yoshihiro Nojima

Hiroshi Tamura

Takao Abe

Shozo Shirai

Yuuichi Matsumoto

Franz Xaver Kaertner

Hitoshi Habuka

Motoyuki Yamada

Shigeru Konishi

Masaru Shinomiya

Toru Otsuka

Koji Kato

Toshihiko Shindo

Felix Jan Grawert

Kiyoshi Mitani

Masahiro Furuya

Hermann A Haus

Takatoshi Nagoya

Ken Aihara

Hiroshi Mogi

Yoshinori Hayamizu

Ivan Celanovic

Makoto Fujimaki

Tetsuya Igarashi

Yuichi Matsumoto

Weifeng Qu

Toshihiko Miyano

Jun-ichiro Furihata

Xiaoman Duan

Tanaka Koichi

Milov Popovic

Toshihiko Shindoo

Yoshihiro Kuboto

Natalija Z Jovanovic

Francis O'Sullivan

Shigeru Saito

Ito Atsuo

Weifung Qu

Kubota Yoshihiro

Tobisaka Yuuji

Kawai Makoto

A composite substrate capable of improving temperature characteristics while suppressing crack generation and a method for manufacturing such composite substrate is provided. The method for manufacturing composite substrates includes: a step of preparing a piezoelectric material substrate having a rough surface; a step of removing the damaged layer by etching the rough surface of the piezoelectric material substrate using a chemical process; a step of depositing an intervening layer on the rough surface of the piezoelectric material substrate from which the damaged layer has been removed; a step of flattening the surface of the deposited intervening layer; a step of bonding the piezoelectric material substrate to a support substrate having a lower thermal expansion coefficient than the piezoelectric material, with the deposited intervening layer in between; and a step of thinning the piezoelectric material substrate after bonding. Lithium tantalate (LT) or lithium niobate (LN) are suitable as the piezoelectric material.

Method for manufacturing composite substrate

Provided are a composite substrate in which a wafer to be bonded has a sufficiently small surface roughness and which can be prevented from causing film peeling, and a method for producing the composite substrate. The composite substrateof the present invention has a silicon wafer, an interlayer, and a single-crystal silicon thin film or oxide single-crystal thin filmstacked in the order listed and has a damaged layerin a portion of the silicon waferon the side of the interlayer

Composite substrate and production method therefor

A piezoelectric composite substrate for SAW devices with small loss is provided. A composite substrate for a surface acoustic wave device according to one embodiment of the present invention has a piezoelectric single crystal thin film, a support substrate, and a first intervening layer between the piezoelectric single crystal thin film and the support substrate. In said composite substrate, the first intervening layer is in contact with the piezoelectric single crystal thin film, and the acoustic velocity of the transverse wave in the first intervening layer is faster than the acoustic velocity of the fast transverse wave in the piezoelectric single crystal thin film.

Composite substrate for surface acoustic wave device and manufacturing method thereof

A method of manufacturing a composite substrate that includes bonding a silicon (Si) wafer having an interstitial oxygen concentration of 2 to 10 ppma to a piezoelectric material substrate as a support substrate, and thinning the piezoelectric material substrate after the bonding. The piezoelectric material substrate is particularly preferably a lithium tantalate wafer (LT) substrate or a lithium niobate (LN) substrate.

Method of manufacturing composite substrate

There are provided a method for manufacturing a substrate excellent in heat dissipation with a small loss in radio frequencies with no need of a high temperature process in which a metal impurity is diffused, and a substrate of high thermal conductivity. A composite substrate according to the present invention is a composite substrate having a piezoelectric single crystal substrate, a support substrate, and an intermediate layer provided between the piezoelectric single crystal substrate and the support substrate. The intermediate layer is a film formed of an inorganic material, and at least a part of the film is thermally synthesized silica. The intermediate layer may be separated into at least two layers along the bonding surface of the composite substrate. The first intermediate layer in contact with the support substrate may be a layer including thermally synthesized silica.

Composite substrate, surface acoustic wave device, and method for manufacturing composite substrate

Provided is a composite substrate for surface acoustic wave device which does not cause peeling of an entire surface of a piezoelectric single crystal film even when heating the film to 400&#xb0; C. or higher in a step after bonding. The composite substrate is formed by providing a piezoelectric single crystal substrate and a support substrate, forming a film made of an inorganic material on at least one of the piezoelectric single crystal substrate and the support substrate, and joining the piezoelectric single crystal substrate with the support substrate so as to sandwich the film made of the inorganic material.

Method of producing composite substrate for surface acoustic wave device

A silicon carbide substrate production method includes: the step of providing covering layers, each containing silicon oxide, silicon nitride, silicon carbonitride, or silicide, respectively on both surfaces of a base material substratecarbon, silicon or silicon carbide, and turning the surface of each of the covering layersinto a smooth surface to prepare a support substrate; a step of forming a polycrystalline silicon carbide filmon both surfaces of the support substrateby a gas phase growth method or a liquid phase growth method; and a step of separating the polycrystalline silicon carbide films from the support substrate while preserving, on the surface thereof, the smoothness of the covering layer surfacesby chemically removing at least the covering layers, from the support substrate. The silicon carbide substrate has a smooth surface and reduced internal stress.

Silicon carbide substrate production method and silicon carbide substrate

A composite substrate includes a single crystal support substrate containing first element as a main component; an oxide single crystal layer provided on the single crystal support substrate and containing a second element (excluding oxygen) as a main component; and an amorphous layer provided in between the single crystal support substrate and the oxide single crystal layer and containing a first element, a second element, and Ar, the amorphous layer having a first amorphous region in which proportion of the first element is higher than proportion of the second element, and a second amorphous region in which the proportion of the second element is higher than the proportion of the first element, concentration of Ar contained in the first amorphous region being higher than concentration of Ar contained in the second amorphous region and being 3 atom % or more.

Composite substrate and method of manufacturing composite substrate

Provided is an SiC composite substratehaving a monocrystalline SiC layeron a polycrystalline SiC substrate, wherein: some or all of the interface at which the polycrystalline SiC substrateand the monocrystalline SiC layerare in contact is an unmatched interface Ithat is not lattice-matched; the monocrystalline SiC layerhas a smooth obverse surface and has, on the side of the interface with the polycrystalline SiC substrate, a surface that has more pronounced depressions and projections than the obverse surface; and the close-packed plane (lattice plane) of the crystals of the polycrystalline SiC in the polycrystalline SiC substrateis randomly oriented with reference to the direction of a normal to the obverse surface of the monocrystalline SiC layer. The present invention improves the adhesion between the polycrystalline SiC substrate and the monocrystalline SiC layer.

SiC composite substrate and method for manufacturing same

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof; subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90&#xb0; C. or higher at which cracking is not caused; and exposing the heat-treated laminate to visible light to split along the ion-implanted layer to obtain the composite wafer.

Method for producing composite wafer having oxide single-crystal film

A compound semiconductor laminate substrate comprising two single-crystalline compound semiconductor substrates directly bonded together and laminated, the single-crystalline compound semiconductor substrates having the same composition including A and B as constituent elements and having the same atomic arrangement, characterized in that the front and back surfaces of the laminate substrate are polar faces comprising the same kind of atoms of A or B, and that a laminate interface comprises a bond of atoms of either B or A and is a unipolar anti-phase region boundary plane in which the crystal lattices of the atoms are matched. In this way, the polar faces of the front and rear surfaces of the compound semiconductor laminate substrate are made monopolar, thereby facilitating semiconductor element process designing, and making it possible to manufacture a low-cost, high-performance, and stable semiconductor element without implementing complex substrate processing.

Compound semiconductor laminate substrate, method for manufacturing same, and semiconductor element

To provide a method for producing a composite wafer capable of reducing a spurious arising by reflection of an incident signal on a joint interface between a lithium tantalate film and a supporting substrate, in the composite wafer including a supporting substrate having a low coefficient of thermal expansion, and a lithium tantalate film having a high coefficient of thermal expansion stacked on the supporting substrate. The method for producing a composite wafer is a method for producing a composite wafer that produces a composite wafer by bonding a lithium tantalate wafer having a high coefficient of thermal expansion to a supporting wafer having a low coefficient of thermal expansion, wherein prior to bonding together, ions are implanted from a bonding surface of the lithium tantalate wafer and/or the supporting wafer, to disturb crystallinity near the respective bonding surfaces.

Method for producing composite wafer

A composite wafer having an oxide single-crystal film transferred onto a support wafer, the film being a lithium tantalate or lithium niobate film, and the composite wafer being unlikely to have cracking or peeling caused in the lamination interface between the film and the support wafer. More specifically, a method of producing the composite wafer, including steps of: implanting hydrogen atom ions or molecule ions from a surface of the oxide wafer to form an ion-implanted layer inside thereof, subjecting at least one of the surface of the oxide wafer and a surface of the support wafer to surface activation treatment; bonding the surfaces together to obtain a laminate; heat-treating the laminate at 90&#xb0; C. or higher at which cracking is not caused; and applying a mechanical impact to the ion-implanted layer of the heat-treated laminate to split along the ion-implanted layer to obtain the composite wafer.

Provided is a high-performance composite substrate for surface acoustic wave device which has good temperature characteristics and in which spurious caused by the reflection of a wave on a joined interface between a piezoelectric crystal film and a support substrate is reduced. The composite substrate for surface acoustic wave device includes: a piezoelectric single crystal substrate; and a support substrate, where, at a portion of a joined interface between the piezoelectric single crystal substrate and the support substrate, at least one of the piezoelectric single crystal substrate and the support substrate has an uneven structure, a ratio of an average length RSm of elements in a cross-sectional curve of the uneven structure to a wavelength &#x3bb; of a surface acoustic wave when the substrate is used as a surface acoustic wave device is equal to or more than 0.2 and equal to or less than 7.0.

Composite substrate for surface acoustic wave device, method of producing composite substrate for surface acoustic wave device, and surface acoustic wave device using composite substrate

A manufacturing method of an SiC composite substratethat includes a single crystal SiC layeron a polycrystalline SiC substrate. After manufacturing a single crystal SiC layer supporting bodyby providing the single crystal SiC layeron one surface of a holding substrateincluding Si. A polycrystalline SiC is deposited on the single crystal SiC layerthrough chemical vapor deposition to manufacture an SiC laminated bodylaminated with the single crystal SiC layerand the polycrystalline SiC layerhaving a thickness t on the holding substrate'. At the same time, the single crystal SiC layer supporting bodyis heated at a temperature less than 1,414 degrees Celsius, and a portion of the thickness t of the polycrystalline SiC is deposited. Then, the holding substrate&#x2032; is physically and/or chemically removed.

Manufacturing method of SiC composite substrate

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Gunma, Japan

Shoji Akiyama