Denso Corporation

Sumco Corporation

Sumitomo Mitsubishi Silicon Corporation

Shoichi Yamauchi

Hitoshi Yamaguchi

Syouji Nogami

Tomonori Yamaoka

Nobuhiro Tsuji

Yoshiyuki Hattori

Yasushi Urakami

Takumi Shibata

Toshiyuki Morishita

Kyoko Okada

Kunihiro Onoda

Tomoatsu Makino

Masaki Matsui

Hisayoshi Ohshima

Toshio Sakakibara

Jun Sakakibara

Makoto Kuwahara

Takashi Suzuki

Masaru Hori

Takeshi Enya

Mikimasa Suzuki

Akitoshi Yamanaka

Akiyoshi Asai

Takanari Sasaya

Yoshinori Otsuka

Kyoko Nakashima

Yukichi Horioka

Toshifumi Izumi

Tadao Ooka

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type layer formed on an N-type substrate. This trench is used to leave voids after the formation of a P-type epitaxial film on the N-type layer. Then, the voids formed in the N-type layer can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

Method for manufacturing semiconductor substrate

A semiconductor substrate is provided in which an alignment mark is formed that can be used for an alignment even after the formation of an impurity diffused layer by the planarization of an epitaxial film. A trench is formed in an alignment region of an N-type substrate. This trench is used to leave voids after the formation of an N-type layer. Then, the voids formed in the N-type substrate can be used as an alignment mark. Thus, such a semiconductor substrate can be used to provide an alignment in the subsequent step of manufacturing the semiconductor apparatus. Thus, the respective components constituting the semiconductor apparatus can be formed at desired positions accurately.

A method for manufacturing a semiconductor device includes the steps of: forming a trench in a semiconductor substrate; and forming an epitaxial film on the substrate including a sidewall and a bottom of the trench so that the epitaxial film is filled in the trench. The step of forming the epitaxial film includes a final step before the trench is filled with the epitaxial film. The final step has a forming condition of the epitaxial film in such a manner that the epitaxial film to be formed on the sidewall of the trench has a growth rate at an opening of the trench smaller than a growth rate at a position of the trench, which is deeper than the opening of the trench.

Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device includes steps of: forming a trench on a main surface of a silicon substrate; forming a first epitaxial film on the main surface and in the trench; and forming a second epitaxial film on the first epitaxial film. The step of forming the first epitaxial film has a first process condition with a first growth rate of the first epitaxial film. The step of forming the second epitaxial film has a second process condition with a second growth rate of the second epitaxial film. The second growth rate is larger than the first growth rate.

Method for manufacturing semiconductor device and epitaxial growth equipment

A resistivity of an epitaxial layer in a trench is changed in a stepwise manner by reducing a quantity of an impurity diffused into the epitaxial layer in the trench from a semiconductor wafer in a stepwise manner, thereby suppressing an influence of auto-doping from the semiconductor wafer. An epitaxial layeris grown in a trenchof a semiconductor waferhaving a trench structure by gradually reducing a temperature in a temperature in the range of 400 to 1150&#xb0; C. by a vapor growth method while supplying a silane gas as a raw material gas, thereby filling the epitaxial layerin the trench

Manufacturing method of semiconductor wafer having a trench structure and epitaxial layer

A method for manufacturing a semiconductor device includes steps of: forming a first epitaxial film on a silicon substrate; forming a trench in the first epitaxial film; and forming a second epitaxial film on the first epitaxial film and in the trench. The step of forming the second epitaxial film includes a final step, in which a mixed gas of a silicon source gas and a halide gas is used. The silicon substrate has an arsenic concentration defined as &#x3b1;. The second epitaxial film has an impurity concentration defined as &#x3b2;. The arsenic concentration and the impurity concentration has a relationship of: &#x3b1;&#x2266;3&#xd7;10&#xd7;ln(&#x3b2;)&#x2212;1&#xd7;10.

Semiconductor device, method for manufacturing the same and method for evaluating the same

A semiconductor device includes: two main electrodes; multiple first regions; and multiple second regions. The first region having a first impurity concentration and a first width and the second region having a second impurity concentration and a second width are alternately repeated. A product of the first impurity concentration and the first width is equal to a product of the second impurity concentration and the second width. The first width is equal to or smaller than 4.5 &#x3bc;m. The first impurity concentration is lower than a predetermined concentration satisfying a RESURF condition. A ratio between on-state resistances of the device at 27&#xb0; C. and at 150&#xb0; C. is smaller than 1.8.

Semiconductor device having super junction structure

A semiconductor device having SJ structure has a peripheral region having a higher withstand voltage than the withstand voltage of the cell region. A semiconductor upper layer including second conductivity-type impurities and a semiconductor lower layer including first conductivity-type impurities whose concentration is lower than the first portion region constituting the combination of the cell region are formed in the semiconductor layer of the peripheral region. A field oxide layer is formed on a surface of the semiconductor upper layer.

Method of manufacturing semiconductor device

A method for manufacturing a semiconductor device includes steps of: forming a trench on a semiconductor substrate, which is made of silicon; and filling the trench with an epitaxial layer. The epitaxial layer is made of silicon, and the step of filling the trench includes a step of performing a plasma CVD method with using a silicon source gas. By using anisotropic character of a plasma, the epitaxial layer is selectively deposited on a bottom of the trench. Thus, the trench is filled with the epitaxial layer having no void.

Method for manufacturing semiconductor device having trench

A super junction type semiconductor device includes a first semiconductor layer of a first conductivity type, a super junction structure, and a second semiconductor layer of a second conductivity type. The thickness of the second semiconductor layer varies such that the thickness in the peripheral region is greater than that in the active region, which is used as a body region. Therefore, a depletion layer in the peripheral region expands sufficiently in the thickened portion of the second semiconductor layer as well as in the super junction structure. Thus, the avalanche withstanding capability is improved.

Semiconductor device and method of manufacturing the same

Closure at the opening of a trench with an epitaxial film is restrained, and thereby, filling morphology in the trenches is improved. A method for manufacturing a semiconductor substrate includes a step for growing an epitaxial layeron the surface of a silicon substrate, a step of forming a trenchin this epitaxial layer, and a step of filling the inside of the trenchwith the epitaxial film, wherein mixed gas made by mixing halogenoid gas into silicon source gas is circulated as material gas in filling the inside of the trench with the epitaxial film, and when the standard flow rate of the halogenoid gas is defined as Xslm and the film formation speed of the epitaxial film formed by the circulation of the silicon source gas is defined as Y&#x3bc;m/min, in the case when the aspect ratio of the trench is less than 10, an expression Y&#x3c;0.2X+0.10 is satisfied, and in the case that the aspect ratio of the trench is between 10 and less than 20, an expression Y&#x3c;0.2X+0.05 is satisfied, and in the case that the aspect ratio of the trench is 20 or more, an expression Y&#x3c;0.2X is satisfied.

Manufacturing method of semiconductor substrate

A semiconductor device includes: a cell region; a terminal region; a lower semiconductor layer; a intermediate semiconductor layer on the lower semiconductor layer including a super junction structure; a terminal upper semiconductor layer on the intermediate semiconductor layer; a terminal contact semiconductor region on a surface portion of the terminal upper semiconductor layer adjacent to the cell region; an insulation layer on the terminal upper semiconductor layer having a first part adjacent to the cell region with a small thickness and a second part adjacent to the first part with a large thickness; and a conductive layer in the cell region and a part of the terminal region, the conductive layer extending from the cell region to the part of the terminal region beyond the first part of the insulation layer.

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Nagoya, Japan

Shoichi Yamauchi