Fujitsu Corporation

Shoichi Suda

Keiji Watanabe

Masayuki Takeda

Kazuaki Kurihara

Yoshihiro Nakata

Miwa Kozawa

Norikazu Nakamura

Eishin Yamakawa

Hiroshi Chiba

Isao Yahagi

Tsuyoshi Kanki

Tsukasa Itani

Fumi Yamaguchi

Michitaka Morikawa

Azuma Matsuura

Shinya Sasaki

Shino Tokuyo

A wiring structure includes: an insulating film formed over a substrate; a plurality of wirings formed on the insulating film; and an inducing layer, which is formed on the insulating film in a region between the plurality of wirings, a constituent atoms of the wirings are diffused in the inducing layer.

Wiring structure and manufacturing method thereof, and electronic apparatus and manufacturing method thereof

A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section.

Manufacturing method of semiconductor device and semiconductor device

The method includes the steps of forming a porous insulation film and wires on the substrate, the wires embedded in the porous insulation film having a portion adjacent to the wires and a remote portion spaced apart from the wires; and applying an energy beam to the remote portion to change the structure of the porous insulation film such that an Young's modulus of the porous insulation film increased so as to substantially reinforce the strength of the porous insulation film.

Semiconductor device having a interlayer insulation film with low dielectric constant and high mechanical strength

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &#x3bc;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation;   Preferably, 0.25&#x2266;a&#x2266;0.60, and 0&#x2266;c&#x2266;0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Alkali-soluble siloxane polymer, positive type resist composition, resist pattern, process for forming the same, electronic device and process for manufacturing the same

A magnetic disk is produced with improved yield by forming a DLC protective film by a d.c. magnetron sputtering process conducted in a sputtering atmosphere containing oxygen. The magnetic disk carries a lubricating film on the DLC film wherein a fluorocarbon resin constituting the lubricating film contains photocrosslinking groups. A lubricating film having non-polar end groups is also disclosed.

Magnetic disk drive having a surface coating on a magnetic disk

A manufacturing method of a magnetic head includes a process for forming a lift-off mask pattern on a magnetoresistance effect element, such that the upper part of the lift-off mask pattern is larger in size than the lower part, a process for forming a couple of electrodes on the magnetoresistance effect element using the lift-off mask pattern as a mask, and a process for removing the lift-off mask pattern. The process for forming the lift-off mask pattern is performed according to a dry etching process.

Manufacturing process of a magnetic head, magnetic head, pattern formation method

A positive type resist composition having an alkali-soluble siloxane polymer expressed by the following Formula (1), a photosensitive compound, and a 1 &#x3bc;m thick resist film formed of the positive type resist composition which has 5% to 60% of transmittance to i-line radiation; Preferably, 0.25&#x2266;a&#x2266;0.60, and 0&#x2266;c&#x2266;0.25. The composition is preferably used in a resist film undergoing oxygen plasma etching.

Growing community of inventors

Kawasaki, Japan

Shoichi Suda