Fujifilm Corporation

Shoichi Saitoh

Hidenori Takahashi

Michihiro Shirakawa

Shohei Kataoka

Fumihiro Yoshino

Shuhei Yamaguchi

Keita Kato

Kaoru Iwato

Yuichiro Enomoto

Sou Kamimura

A pattern forming method comprises (i) a step of forming a film by using an actinic ray-sensitive or radiation-sensitive resin composition containing: (A) a resin containing a repeating unit having a group capable of decomposing by the action of an acid to produce a polar group, (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation, and (C) a solvent, (ii) a step of exposing the film, and (iii) a step of developing the exposed film by using an organic solvent-containing developer to form a negative pattern, wherein the content of a repeating unit represented by the following formula (I) is less than 20 mol % based on all repeating units in the resin (A) and the resin (A) contains a repeating unit having a non-phenolic aromatic group other than the repeating unit represented by the specific formula.

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin  composition, resist film, method for manufacturing electronic device, and electronic device

A pattern forming method, includes: (i) a step of forming a film from an actinic ray-sensitive or radiation-sensitive resin composition containing (P) a resin having (a1) a repeating unit capable of decomposing by an action of an acid to produce a carboxyl group, represented by the following formula (I) as defined in the specification and (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (ii) a step of exposing the film; and (iii) a step of performing a development by using a developer containing an organic solvent to form a negative pattern. 

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, manufacturing method of electronic device and electronic device

Provided is a pattern forming method that is excellent in roughness performance such as line width roughness and exposure latitude, and an actinic-ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method. The pattern forming method includes (1) forming a film using an actinic-ray-sensitive or radiation-sensitive resin composition containing a resin that includes 65 mol % or more of a repeating unit having a group which generates a polar group by being degraded by the action of an acid based on all repeating units in the resin and at least one kind of repeating unit represented by the following General Formula (I) or (II), (2) exposing the film, and (3) developing the exposed film using a developer that contains an organic solvent. 

Pattern forming method, actinic-ray-sensitive or radiation-sensitive resin composition, and resist film

The pattern forming method of the invention includes (i) forming a film using an actinic ray-sensitive or radiation-sensitive resin composition containing a resin (P) having a repeating unit (a) represented by the following general formula (I), a compound (B) capable of generating an organic acid upon irradiation with actinic rays or radiation, and a nitrogen-containing organic compound (NA) having a group capable of leaving by the action of an acid, (ii) exposing the film, and (iii) developing the film after the exposure using a developer including an organic solvent to form a negative type pattern, 

Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition, resist film, method for preparing electronic device, and electronic device

Provided is a method of forming pattern including (a) forming a chemically amplified resist composition into a film, (b) exposing the film to light, and (c) developing the exposed film with a developer containing a first organic solvent, wherein in the developer, particles each having a diameter of 0.3 &#x3bc;m or greater amount to a density of 30 particles/ml or less.

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Shizuoka, Japan

Shoichi Saitoh