Shin-etsu Chemical Co., Ltd.

Other

Hokko Chemical Industry Co., Ltd.

Shin-etsu Chemical C O., Ltd.

Shoichi Osada

Toshio Shiobara

Kazutoshi Tomiyoshi

Eiichi Asano

Takayuki Aoki

Shigeki Ino

Norifumi Kawamura

Ryuhei Yokota

Kenji Hagiwara

Masayuki Umeno

Hiroyuki Takenaka

Shingo Ando

Tatsuya Ishizaki

Kenji Ohashi

Nobukazu Suzuki

Munenao Hirokami

Yoshihiro Tsutsumi

Miyuki Wakao

Masachika Yoshino

Naoyuki Kushihara

Yusuke Taguchi

Junichi Sawada

Kohei Otake

Yasuo Kimura

Tomoyoshi Tada

Tadaharu Ikeda

Masahiro Kaneta

Tarou Shimoda

Eiji Nakayama

Hiroki Oishi

Kenichi Totsuka

Hiroki Horigome

Tatsurou Hirano

Provided are an epoxy resin composition for semiconductor encapsulation; and a semiconductor device having a cured product of such composition. The composition has a superior curability, and a metal layer (plated layer) can be selectively and easily formed on the surface of or inside the cured product of this composition via an electroless plating treatment. The composition of the present invention contains:

Epoxy resin composition for semiconductor encapsulation and semiconductor device

Provided is a heat-curable resin composition capable of yielding a cured product that has a superior dielectric property and heat resistance and is thus useful for high-frequency purposes. Particularly, there are provided a composition containing the following components (A), (C) and (D); and a composition containing the following components (A) and (B). The components (A), (B), (C) and (D) are: 

Heat-curable resin composition and uses thereof

The invention provides a resin composition comprising a specific silicone-modified epoxy resin, a specific silicone-modified phenolic resin, black pigment, and an inorganic filler. The invention also provides a resin composition comprising a specific cyanate ester compound, a specific silicone-modified epoxy resin, and a specific phenol compound and/or silicone-modified phenolic resin.

Silicone-modified epoxy resin composition and semiconductor device

An epoxy resin composition comprising an epoxy resin, a curing agent, (A) a carboxyl-containing benzotriazole derivative, and (B) an alkoxysilyl-containing aminoalkylsilane derivative is suited for encapsulating semiconductor devices. The sum of (A)+(B) is 0.5-5.0 pbw per 100 pbw of the sum of the epoxy resin and the curing agent, and a molar ratio (A)/(B) is 0.5-1.5. The composition is free of sulfur and highly adhesive to metal substrates.

Semiconductor-encapsulating epoxy resin composition and semiconductor device

The invention provides a silicone-modified epoxy resin composition comprising a silicone-modified epoxy resin having at least two epoxy groups, obtained from hydrosilylation reaction of an alkenyl-containing epoxy compound with an organopolysiloxane, a silicone-modified phenolic resin having at least two phenolic hydroxyl groups, obtained from hydrosilylation reaction of an alkenyl-containing phenol compound with an organopolysiloxane, black pigment, and an inorganic filler. Because of excellent tracking resistance, the epoxy resin composition is suited for encapsulating semiconductor devices.

Provided is a semiconductor encapsulation resin composition exhibiting an insignificant heat decomposition when left under a high temperature of 200 to 250&#xb0; C. for a long period of time; and a superior reliability and adhesion to a Cu LF and Ag plating under a high-temperature and high-humidity environment. The composition comprises: A molar ratio of phenolic hydroxyl groups in (B) to cyanato groups in (A) is 0.08 to 0.25, and a molar ratio of epoxy groups in (C) and (D) to cyanato groups in (A) is 0.04 to 0.25.

Semiconductor encapsulation resin composition and semiconductor device comprised of cured product of the semiconductor encapsulation resin composition

A prepreg that yields a semiconductor device which, even when using Cu wire, exhibits excellent reliability under conditions of high temperature and high humidity (heat-resistant and moisture-resistant reliability), a metal-clad laminate and a printed wiring board that use the prepreg, and a semiconductor device that uses the printed wiring board. Specifically disclosed are a prepreg comprising a substrate and a B-staged resin composition comprising (a) a thermosetting resin, (b) a hydrotalcite compound having a specific composition, (c) zinc molybdate, and (d) lanthanum oxide.

Prepreg, metal-clad laminate, printed wiring board, and semiconductor device

An epoxy resin composition comprising (A) a naphthalene type epoxy resin in which 35-85 parts by weight of 1,1-bis(2-glycidyloxy-1-naphthyl)alkane and 1-35 parts by weight of 1,1-bis(2,7-diglycidyloxy-1-naphthyl)alkane are included per 100 parts by weight of the resin, (B) a curing agent in the form of a naphthalene type phenolic resin, (C) an inorganic filler, and (D) a phosphazene compound is best suited for semiconductor encapsulation because it has good flow, a low coefficient of linear expansion, a high Tg, minimal moisture absorption, and crack resistance upon lead-free soldering.

Semiconductor encapsulating epoxy resin composition and semiconductor device

The present invention provides a silicone resin composition for an optical semiconductor device, comprising 

Silicone resin composition for optical semiconductor devices

Epoxy resin compositions comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) an inorganic filler, (D) a rare earth oxide, and optionally (E) a phosphazene compound cure into products having improved heat resistance and moisture-proof reliability and are best suited for the encapsulation of semiconductor devices.

A semiconductor device comprising an organic substrate, at least one semiconductor chip provided on a surface of the substrate, and a cured resin composition encapsulating the semiconductor chip provided on the surface of the substrate, characterized in that an absolute value of a distance between an imaginary line connecting two diagonally opposite corners of the substrate and a highest or lowest position on the surface of the substrate between the corners is smaller than 600 &#x3bc;m, as measured with a laser three-dimensional measuring instrument, a total volume ratio of the semiconductor chip to the semiconductor device ranges from 18 to 50%, and the cured resin composition comprises an inorganic filler (C) in such an amount that a weight ratio of the inorganic filler (C) to a total weight of the cured resin composition ranges from 80 to 90%.

Semiconductor device encapsulated with resin composition

A semiconductor-encapsulating epoxy resin composition comprising (A) an epoxy resin, (B) a phenolic resin curing agent, (C) an inorganic filler, and (D) carbon black is prepared by mixing a carbon black feedstock and the curing agent with an organic solvent, filtering off coarse particles of carbon black which remain over a mesh sheet with an opening of 20 &#x3bc;m, removing the solvent from the filtrate to yield a premix of curing agent and carbon black, and kneading the premix with the remaining components.

Semiconductor-encapsulating epoxy resin composition, preparation method, and semiconductor device

An epoxy resin composition comprising: (A) an epoxy resin having at least three epoxy groups per molecule and an epoxy equivalent of 170 or lower; (B) an epoxy resin having a phenolic nucleus and two epoxy groups in such an amount that a weight ratio of the epoxy resin (B) to the epoxy resin (A) ranges from 35/65 to 65/35; (C) a phenolic curing agent in such an amount that a molar ratio of phenolic hydroxyl groups to the whole epoxy groups in the composition ranges from 0.5 to 1.5; and (D) an inorganic filler in an amount of from 86 to 92 wt %, based on a total weight of the composition. The composition provides encapsulated semiconductor devices much less warped than those encapsulated with a conventional composition.

Epoxy resin composition for encapsulating semiconductor devices and semiconductor devices encapsulated therewith

A flame retardant featuring: an inorganic porous fine particle, a phosphazene compound represented by the following average compositional formula (1) (X is a single bond, CH, C(CH), SO, S, 0, or O(CO)O; n is an integer of from 3 to 1000; d and e are numbers with 2d+e=2n), and a resin layer. The phosphazene compound is supported on the inorganic porous fine particle, and the resin layer coats the inorganic porous fine particle with the phosphazene compound supported thereon. The resin layer thermally decomposes to lose weight by 10% at a temperature of from 300&#xb0; C. to 500&#xb0; C., as measured by thermogravimetry in the air at a heating rate of 10&#xb0; C./min.

Flame retardant and an epoxy resin composition comprising the same for encapsulating semiconductor devices

A flame retardant epoxy resin composition for semiconductor encapsulation includes as essential components, (A) an epoxy resin, (B) a curing agent, (C) an inorganic filler, and (D) a phosphazene compound of the average compositional formula (1) having a melting point of 110&#x2013;130&#xb0; C., wherein a, b and n are numbers satisfying 0&#x3c;a&#x2266;0.05n, 1.90n&#x2266;b&#x3c;2n, 2a+b=2n, and 3&#x2266;n&#x2266;6, the composition being substantially free of bromides and antimony compounds.

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Annaka, Japan

Shoichi Osada