Sanyo Electric Co., Ltd.

Shoichi Nakano

Yukinori Kuwano

Masaru Takeuchi

Takeo Fukatsu

Souichi Sakai

Kenichi Shibata

Hisaki Tarui

Shigeru Noguchi

Kaneo Watanabe

Hiroyuki Kuriyama

Kazuyuki Gotoh

Shinya Tsuda

Kazuhiko Honma

Takao Matsuyama

Shingo Okamoto

Mitsugu Kobayashi

Hisao Uehara

Kousuke Takeuchi

Kazuhiko Kuroki

Tsuyoshi Takahama

Koji Minami

Masayuki Iwamoto

Kenichiro Wakisaka

Masaru Yamano

Toshiharu Tanaka

Tsugufumi Matsuoka

Shoichiro Nakayama

Masato Nishikuni

Hirosato Yagi

Saburo Nakashima

Toshiaki Yokoo

Terutoyo Imai

Noriyuki Mori

Nobuhiro Okuda

Kenichiro Wakizaka

Seiji Nishikawa

A semiconductor device including a semiconducting layer made of polycrystalline silicon, an insulating film provided on an upper face of the semiconducting layer and an electrode provided on an upper face of the insulating film such that channels are formed on the upper face of the semiconducting layer, the improvement comprising: a further semiconducting layer made of amorphous silicon, which is provided between the semiconducting layer and the insulating film.

Semiconductor device

A photovoltaic device includes a substrate (1, 10) having a conductive electrode (2, 10), and a first semiconductor layer (3.sub.1, 11.sub.1) of a first conductivity type, a substantially intrinsic second semiconductor layer (3.sub.2, 11.sub.2) and a third semiconductor layer (3.sub.3, 11.sub.3) of the opposite conductivity type successively deposited on the conductive electrode. The hydrogen content in at least the first and second semiconductor layer (3.sub.1, 11.sub.1) is 10% or less. At least the second semiconductor layer (3.sub.2, 11.sub.2), is made of an amorphous semiconductor layer.

Photovoltaic device

The invention discloses a novel flat display panel suited for use with computer terminal equipment, television sets, or the like. The flat display panel first confines light in a core layer of a light wave guide, and then diminishes refractive index in part of the core layer by applying a specific vltage to it. Light transmitted from part of the core layer having diminished refractive index is then outputted outside from the light wave guide. Using the externally outputted light, the flat display panel displays figures. The flat display panel embodied by the invention minimizes the total thickness of the display panel itself. It effectively allows display of figures in a sizable visual area, and yet, allows display of figures at an extremely fast speed as well.

Flat display panel

An infrared gas analyzer using a pyroelectric infrared sensor, which includes a heating unit for heating the infrared sensor, a heating sensor for detecting its heating temperature and a temperature sensor for detecting the ambient temperature of the infrared sensor, and controls the heating unit so as to retain the ambient temperature of the infrared sensor at a constant so that the output error is small irrespective of the change in ambient temperature.

Heated infrared gas analyzer using a pyroelectric infrared sensor

A card type image reader comprises a rectangular card base and a reinforcing member provided on one side of the card base. A photodetector array in a straight line is provided on one end portion of the reinforcing member and the card base holds control circuit means and memory means. The control circuit means reads information of an original through the photodetector array in synchronization with a clock signal and stores the read information into the memory means.

Card type image reader with means for relieving bending stress

An electrostatic latent image forming apparatus includes a dielectric drum (10) a surface of which is uniformly charged in a predetermined polarity by a charging corotron (16). A recording head (18) includes a transparent base plate (30), a transparent electrode (32) and a photoconductive layer (34) composed of an amorphous silicon are formed on the transparent base plate in this order. A plurality of discharging electrodes (36) are formed on the photoconductive layer. A bias voltage (46) having a reverse polarity of the charged polarity being charging by the charging corotron is applied. When a light signal in accordance with an image to be formed is entered on the back surface of the transparent base plate, carriers, that is, holes and electrons are generated in the photoconductive layer, the carrier having the same polarity as the bias voltage is discharged onto the dielectric drum through the discharging electrodes. Electric charges are removed or reduced at a portion on the dielectric drum where such discharge occurs, and therefore an electrostatic latent image in accordance with the light signal being entered is formed on the dielectric drum.

Electrostatic latent image forming apparatus

An electrophotographic photosensitive sensor comprises a blocking layer, a photoconductive layer and a surface layer made mainly of microcrystalline or amorphous silicon and/or germanium and formed on a conductive substrate. At least one of the layers including the blocking layer, the photoconductive layer or the surface layer includes a multilayer which includes a plurality of constituent thin layers having different optical energy band gaps.

Electrophotographic photosensitive sensor

An electrostatic recording apparatus comprises a photosensitive drum. The photosensitive drum comprises a bulk layer of amorphous silicon formed on a support, and in the bulk layer, a first layer region is formed at the support side and a second layer region is formed at the surface side. The first layer region is formed in a manner of comprising hydrogen of 0.01-40 atomic %, oxygen of 0.1-40 atomic % and boron of 5.times.10.sup.-6 -1.0 atomic %. On the other hand, oxygen and boron are not doped virtually in the second layer region and generation of carrier traps is suppressed in this non-doped second layer region. Furthermore, the peak wavelengths of the lights irradiated onto the photosensitive drum from both a light source for exposure and light source for discharge are set shorter than 650 nm, and preferably shorter than 600 nm. Light of short wavelengths shorter than 650 nm is almost absorbed in the second layer region, and generation of carriers in the first layer region is small, and thereby capture of carriers in traps is suppressed.

Electrostatic recording apparatus

A transparent photo detector device according to an aspect of the present invention comprises: a transparent insulator substrate; a plurality of light sensor elements dispersively disposed on a main surface of the substrate, said sensor element including a transparent front electrode, a semiconductor layer for photo electric function and an opaque back electrode formed in that order on the main surface of the substrate, said semiconductor layer being neither protracting from nor retracting into between said front and back electrodes; and a transparent wire pattern formed on the main surface of the substrate for electrically connecting the plurality of sensor elements.

Transparent photo detector device

A transparent conductive film is formed on a glass substrate covering substantially its entire surface area and this transparent conductive film is divided into a plurality of transparent conductive parts per each photoelectric converting region. The photoelectric converting region is of a nearly rectangular shape, and accordingly, in order to divide the transparent conductive film into respective transparent conductive film parts, a laser beam is irradiated along all longitudinal and lateral sides of the rectangle. Thereby, the transparent conductive film parts corresponding to the photoelectric converting regions are formed as island regions. Semiconductor film parts are formed on the transparent conductive film parts divided into island regions corresponding to respective photoelectric converting regions and subsequently aluminum film parts are formed on these semiconductor film parts. Transparent conductive film parts are electrically connected to aluminum film parts of adjacent photoelectric converting regions. Thus, a photovoltaic device is manufactured wherein a plurality of photoelectric converting regions are formed on the substrate and respective photoelectric converting regions are connected in a series fashion.

A field effect transistor comprises a source electrode, a drain electrode, a channel layer between the source electrode and the drain electrode, a gate electrode for controlling electric current in the channel layer, and a superlattice layer interposed between the channel layer and the gate electrode, the superlattice layer having a plurality of constituent thin layers perpendicular to a direction of electric current in the channel layer.

Field effect transistor

Method of manufacturing photovoltaic device

A method of making a semiconductor film on a substrate having a non-flat surface, by placing the substrate in a reaction chamber including at least a pair of discharge electrodes, an inlet of a reaction gas for producing a desired semiconductor film, and an outlet for reduced pressure, and performing a discharge in the presence of said reacrion gas for producing said semiconductor film, while arranging said non-flat surface of said substrate outside a plasma region formed between said discharge electrodes and further locating said non-flat surface substantially in a vertical direction with respect to electrode surfaces of said discharge electrodes, thereby semiconductor film being directly and uniformly deposited on said non-flat surface of said substrate, which is of worth in the production of, e.g., roofing tile-shaped photovoltaic devices.

Method of making semiconductor film

A semiconductor optical logical device comprises two light-emitting elements (2a, 2b) formed on one main surface of a transparent substrate (1), and two light sensitive elements (3a, 3b) formed on the other main surface faced to the light emitting elements (2a, 2b), respectively. The two light sensitive elements (3a, 3b) are comprised of amorphous semiconductor and are electrically connected in series. On the other hand, the light-emitting elements (2a, 2b) are driven responsive to individual input signals, respectively. If and when two input signals are applied simultaneously, the two light-emitting elements (2a, 2b) emit light simultaneously, so that an output is obtained from the two light sensitive elements connected in series. If and when only one input signal is applied, no output is obtained. Thus, an optical logical product circuit is provided.

Semiconductor optical logical device

A light sensitive apparatus includes a light sensitive body and at least two leads electrically connected thereto so that the light sensitive body can be mechanically supported by the leads. The light sensitive body includes a light transmissible substrate, a transparent electrode formed on the substrate, a thin film of non-single crystal semiconductor layer deposited on the transparent electrode, a first electrode disposed on the non-single crystal semiconductor, and the second electrode disposed on an exposed portion of the transparent electrode. The first lead is connected to the first electrode and the second lead is connected to the second electrode.

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Hirakata, Japan

Shoichi Nakano