Renesas Electronics Corporation

Other

Mitsubishi Denki Kabushiki Kaisha

Shoichi Fukui

Takeru Matsuoka

Atsushi Ishii

Takeshi Furusawa

Masakazu Okada

Noboru Morimoto

Junko Izumitani

Naohito Suzumura

Yasutaka Nishioka

Takao Kamoshima

Takeshi Masamitsu

Masatsugu Amishiro

The reliability of a semiconductor device having an embedded wire in the lowest layer wire is improved. In a main surface of a semiconductor substrate, MISFETs are formed and over the main surface, insulating filmsare formed. In the insulating filmsa contact hole is formed and a plug is embedded therein. Over the insulating filmin which the plug is embedded, insulating filmsare formed and an opening is formed in the insulating filmsand a wire is embedded therein. The insulating filmis an etching stopper film when etching the insulating filmin order to form the opening, containing silicon and carbon. The insulating filmhas a high hygroscopicity and the insulating filmhas a low moisture resistance, however, by interposing the insulating filmtherebetween and making the insulating filmhave a higher density of the number of Si (silicon) atoms than that of the insulating film, an electrically weak interface is prevented from being formed.

Semiconductor device having metal contacts formed in an interlayer dielectric film comprising four silicon-containing layers

To provide a manufacturing method of a semiconductor device which can improve the reliability of the semiconductor device. A first insulating film for covering a semiconductor element formed in a semiconductor substrate is formed by a thermal CVD method or the like which has a good embedding property. A second insulating film is formed to cover the first insulating film by a plasma CVD method which has excellent humidity resistance. A plug is formed to penetrate the first insulating film and the second insulating film. A third insulating film comprised of a low-k film having a relatively low dielectric constant is formed over the second insulating film. A wiring is formed in the third insulating film by a damascene technique to be electrically coupled to the plug.

Semiconductor device, and manufacturing method thereof

A plurality of MOS type FET devices and are provided on a semiconductor substrate A lower interlayer insulating film is provided thereon. Each of through holes which extends from each of gate electrodes of the plural FET devices via source/drain regions and , is defined in the lower interlayer insulating film A local wiring is buried in the through hole to connect each gate electrode and the source/drain regions and . Further, an upper interlayer insulating film is provided on the local wiring and the lower interlayer insulating film Upper electrode layers are placed on the surface of the upper interlayer insulating film

Semiconductor device having S/D to S/D connection and isolation region between two semiconductor elements

A semiconductor-device fabrication method includes a step of forming a contact hole in a semiconductor substrate and a step of forming a conductive contact hole. The step of forming the contact hole is performed by repeating two times or more a burying step of depositing a conductive material to bury the conductive material in the contact hole and an etch-back step of removing the conductive material around the contact hole by etch back.

Semiconductor-device fabrication method

Growing community of inventors

Tokyo, Japan

Shoichi Fukui