Central Glass Company, Limited

Tokyo Electron Limited

Denka Company Limited

Shoi Suzuki

Akifumi Yao

Hiroyuki Oomori

Takehiko Orii

Nobuhiro Takahashi

Tatsuya Nagai

Tetsuya Ito

Shinichiro Osumi

Kazuhito Miyata

Shunta Furutani

Takako Arai

Ryosuke Sawamura

A dry etching method according to the present invention includes etching silicon nitride by bringing a mixed gas containing hydrogen fluoride and a fluorine-containing carboxylic acid into contact with the silicon nitride in a plasma-less process at a temperature lower than 100° C. Preferably, the amount of the fluorine-containing carboxylic acid contained is 0.01 vol % or more based on the total amount of the hydrogen fluoride and the fluorine-containing carboxylic acid. Examples of the fluorine-containing carboxylic acid are monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, difluoropropionic acid, pentafluoropropionic acid, pentafluorobutyric acid and the like. This dry etching method enables etching of the silicon nitride at a high etching rate and shows a high selectivity ratio of the silicon nitride to silicon oxide and polycrystalline silicon while preventing damage to the silicon oxide.

Dry etching method

A dry etching method including reacting silicon oxide with: gaseous hydrogen fluoride and a gaseous organic amine compound; a hydrogen fluoride salt of a gaseous organic amine compound; or gaseous hydrogen fluoride, a gaseous organic amine compound, and a hydrogen fluoride salt of a gaseous organic amine compound. The organic amine compound is an organic amine mixture containing at least two compounds represented by the following formula (1):R—N═RR  (1)wherein N is a nitrogen atom; Ris a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; Rand Rare each a hydrogen atom or a C1-C10 hydrocarbon group optionally having a ring, a heteroatom, or a halogen atom; provided that the hydrocarbon group, when it has a carbon number of 3 or more, may have a branched chain structure or a ring structure.

Dry etching method, method for producing semiconductor device, and dry etching gas composition

The method of dry-etching silicon oxide of the present disclosure includes reacting silicon oxide with any one of the following (A) to (C): (A) a gaseous hydrogen fluoride and a gaseous organic amine compound, (B) a gaseous hydrogen fluoride salt of an organic amine compound, and (C) a gaseous hydrogen fluoride, a gaseous organic amine compound, and a gaseous hydrogen fluoride salt of an organic amine compound in a non-plasma state.

Method and device for etching silicon oxide

To provide a carbon black for batteries capable of readily obtaining a positive electrode for batteries having excellent adhesiveness, and excellent output characteristics and the cycle characteristics. A carbon black for batteries, the carbon black having a BET specific surface area measured according to JIS K6217-2 C method of 100 m/g or larger, and a surface fluorine concentration X (unit: atom %) and a surface oxygen concentration Y (unit: atom %) measured by X-ray Photoelectron Spectroscopy (XPS) satisfying the following conditions (A) and (B),0.3&#x2264;&#x2264;4.0 and&#x2003;&#x2003;(A)0.1&#x2264;&#x2264;3.0.&#x2003;&#x2003;(B)

Carbon black for batteries, coating liquid for batteries, positive electrode for nonaqueous batteries and nonaqueous battery

A technique of etching Si on a substrate having Si and another material with a high selectivity using a simple gas system is provided. In an etching method, the substrate having the Si and another material is provided, and the Si is selectively etched over the above-described another material by supplying a germanium-containing gas as an etching gas to the substrate.

Etching method and apparatus

A dry etching method according to the present invention includes etching silicon nitride by bringing a mixed gas containing hydrogen fluoride and a fluorine-containing carboxylic acid into contact with the silicon nitride in a plasma-less process at a temperature lower than 100&#xb0; C. Preferably, the amount of the fluorine-containing carboxylic acid contained is 0.01 vol % or more based on the total amount of the hydrogen fluoride and the fluorine-containing carboxylic acid. Examples of the fluorine-containing carboxylic acid are monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, difluoropropionic acid, pentafluoropropionic acid, pentafluorobutyric acid and the like. This dry etching method enables etching of the silicon nitride at a high etching rate and shows a high selectivity ratio of the silicon nitride to silicon oxide and polycrystalline silicon while preventing damage to the silicon oxide.

A dry etching method according to the present disclosure is for forming a through hole in a laminated film of silicon oxide layers and silicon nitride layers on a substrate in a direction vertical to the laminated film by plasmatizing a dry etching agent to generate a plasma and etching the laminated film by the plasma through a mask having a predetermined opening pattern under a negative direct-current self-bias voltage whose absolute value is 500 V or greater, wherein the dry etching agent contains at least CF, a hydrogen-containing saturated fluorocarbon represented by CHFand an oxidizing gas, and wherein the volume of the hydrogen-containing saturated fluorocarbon contained in the dry etching agent is in a range of 0.1 to 10 times the volume of CFcontained in the dry etching agent.

Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0&#xb0; C. to 100&#xb0; C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.

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Ube, Japan

Shoi Suzuki