Shibaura Mechatronics Corporation

Shohei Tanabe

Hisashi Nishigaki

Atsushi Fujita

Shigeki Matsunaka

Yoshinao Kamo

Koji Yoshimura

Hachiya Takeuchi

Ryo Matsuhashi

According to one embodiment, an electromagnetic wave attenuator includes a first structure body. The first structure body includes a first member, a second member, and a third member. The first member includes a first magnetic layer and a first nonmagnetic layer alternately provided in a first direction. The first nonmagnetic layer is conductive. The first direction is a stacking direction. The second member includes a second magnetic layer and a second nonmagnetic layer alternately provided in the first direction. The second nonmagnetic layer is conductive. The third member includes a third nonmagnetic layer. The third nonmagnetic layer is conductive. A direction from the third member toward the first member is along the first direction. A direction from the third member toward the second member is along the first direction. A first magnetic layer thickness is greater than a second magnetic layer thickness.

Electromagnetic wave attenuator, electronic device, film formation apparatus, and film formation method

According to one embodiment, a film formation apparatus and a moisture removing method thereof that can facilitate the removement of moisture in the chamber without the complication of the apparatus are provided. The film formation apparatus according to the present embodiment includes the chamberwhich an interior thereof can be made vacuum, the exhausterthat exhausts the interior of the chamber, the carrierthat circularly carries the workpiece W by a rotation tableprovided inside the chamber, and the plurality of the plasma processorthat performs plasma processing on the workpiece W which is circularly carried, in which the plurality of the plasma processoreach has the processing spacesandto perform the plasma processing, at least one of the plurality of the plasma processoris the film formation processorthat performs film formation processing by sputtering on the workpiece W which is circularly carried, and at least one of the plurality of the plasma processoris the heaterthat removes moisture in the chamberby producing plasma and heating the interior of the chambervia the rotation tabletogether with exhaustion by the exhausterand rotation by the rotation tablein a condition the film formation process by the film formation processoris not performed.

Film formation apparatus and moisture removal method thereof

A film deposition apparatus reduces hillock formation while yielding uniform film thickness distribution. A film deposition apparatus of a present embodiment includes: a chamber; a rotary table that circulates and carries a workpiece W along a circumferential transfer path L; multiple targets that contain a film deposition material, and that are provided in positions at different radial distances from a center of rotation of the rotary table; a shield member that forms a film deposition chamber surrounding a region where the film deposition material scatters, and that has an opening on the side facing the circulated and carried workpiece; and a plasma generator that includes a sputter gas introduction unit for introducing a sputter gas into the film deposition chamber, and a power supply unit for applying power to the target, and that generates plasma in the sputter gas Gin the film deposition chamber.

Film formation apparatus

The present invention provides a bonding apparatus and bonding method which can prevent warping of substrates by ensuring a sufficient standing time following bonding of the substrates, using a simple and compact apparatus. Substrate carrying partsare formed along the circumference of a rotating turntable. The respective substrate carrying partsare formed so that these parts pass through substrate placement positionsand, a bonding position, pre-curing standing positionsthrough, a curing position, a post-curing standing positionand a conveying positionas the turntablerotates. After being bonded in the bonding position, the substrates move through the pre-curing standing positionsthroughas a result of the rotation of the turntable, and are allowed to stand for a fixed period of time, so that warping is corrected.

Growing community of inventors

Yokohama, Japan

Shohei Tanabe