Toyota Jidosha Kabushiki Kaisha

Denso Corporation

Mirise Technologies Corporation

Shohei Nagai

A semiconductor device includes a substrate main body having a first surface and a second surface, an electric component arranged in the substrate main body, a first internal conductor pattern arranged in a first circuit layer located between the first surface and the electric component, and at least one heat absorbing member. The at least one heat absorbing member is arranged inside the substrate main body and thermally connected to the first internal conductor pattern.

Semiconductor device having electric component built in circuit board

A semiconductor device includes a semiconductor chip, a heat sink, a resin package, heat transfer material and multiple spacers. The heat sink absorbs heat of the semiconductor chip. The resin package accommodates the semiconductor chip, and the resin package has a surface at which the heat sink is disposed. The heat transfer material has fluidity, and the heat transfer material is filled between the heat sink and the cooling plate. The spacers are dispersedly arranged in the heat transfer material, and the spacers are in contact with the heat sink and the cooling plate.

Semiconductor device

A semiconductor device includes: a substrate main body having a first surface and a second surface; an electric component arranged in the substrate main body; a first terminal and a second terminal arranged on the first surface or the second surface, respectively; a first internal conductor pattern arranged in a first circuit layer arranged between the electric component and the first surface, and electrically connected to the first terminal and the electric component; and a second internal conductor pattern arranged in a second circuit layer arranged between the electric component and the second surface, and electrically connected to the second terminal and the electric component. The first internal conductor pattern and the second internal conductor pattern are at least partially opposed to each other inside the substrate main body.

A semiconductor device includes a substrate, a semiconductor element and a tin-based solder layer. The semiconductor element faces the substrate in a normal direction of the substrate. The normal direction corresponds to a normal line of the substrate. The tin-based solder layer joins the semiconductor element to the substrate. The tin-based solder layer a central portion and a peripheral portion surrounding the central portion. The tin-based solder layer has a tin crystal with a C-axis at each of the central portion and the peripheral portion. The C-axis at the central portion intersects the normal line at an angle larger than 45 degrees with respect to the normal line. The C-axis at the peripheral portion either intersects the normal line at an angle smaller than or equal to 45 degrees with respect to the normal line, or is parallel to the normal line.

Semiconductor device and method of manufacturing the same

A power converter includes: a semiconductor module that includes a semiconductor element for power conversion, the semiconductor module having a module surface on which an input terminal electrically connected to the semiconductor element is disposed; a capacitor in which a capacitor terminal is disposed, the capacitor having a capacitor surface facing the module surface; a cooler that is disposed between the semiconductor module and the capacitor; and a connecting member that electrically connects the input terminal and the capacitor terminal.

Power converter

A semiconductor device includes: a substrate main body having a first surface and a second surface; an electric component arranged in the substrate main body; a surface conductor pattern arranged in a first circuit layer located on the second surface. Also included is a first internal conductor pattern and a second internal conductor pattern arranged in a second circuit layer located between the electric component and the second surface, and insulated from each other. Also, at least one first heat conductor via extends from the electric component to the first internal conductor pattern; and at least one second heat conductor via extends from the surface conductor pattern to the second internal conductor pattern.

Growing community of inventors

Nisshin, Japan

Shohei Nagai