Tdk Corporation

Shohei Fujii

Raitarou Masaoka

Maiko Shirokawa

Hiroki Uchiyama

Jiro Yoshinari

Naoki Hayashida

Yusuke Oba

Kazushi Tanaka

Maiko Nakamura

Noriko Ogasawara

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zCOas a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375&#x2264;x&#x2264;0.563, 0.250&#x2264;y&#x2264;0.500, and x/3&#x2264;z&#x2264;(x/3)+1/9, and in an X-ray diffraction chart of the dielectric film, a diffraction peak intensity of a (211) plane of the complex oxide or a diffraction peak intensity of a (222) plane of the complex oxide is larger than a diffraction peak intensity of a (110) plane of the complex oxide.

Dielectric film and electronic component

A dielectric film comprises a complex oxide represented by a general formula xAO-yBO-zCOas a main component, wherein A is at least one selected from barium, calcium and strontium, B is at least one selected from magnesium and zinc, C is at least one selected from niobium and tantalum, x, y and z satisfy relations: x+y+z=1.000, 0.375&#x2264;x&#x2264;0.563, 0.250&#x2264;y&#x2264;0.500, and x/3&#x2264;z&#x2264;(x/3)+1/9, and a full width at half maximum of a diffraction peak of a (110) plane of the complex oxide is 0.40&#xb0; or more in an X-ray diffraction chart of the dielectric film.

A dielectric composition having a high relative dielectric constant and high Q value even at high frequencies, and an electronic component including a dielectric film configured from the dielectric composition. This dielectric composition includes the composite oxide represented by general formula (aCaO+bSrO)&#x2014;ZrOas a main component, and by a and b satisfying the relationships a&#x2265;0, b&#x2265;0, and 1.50&#x3c;a+b&#x2264;4.00.

Dielectric composition and electronic component

A dielectric thin film containing MgO as a main component, wherein the dielectric thin film is composed of a columnar structure group containing at least one columnar structure A constructed by single crystal and at least one columnar structure B constructed by polycrystal, respectively, and in the cross section of the direction perpendicular to the dielectric thin film, when the area occupied by the columnar structure A is set as Cand the area occupied by the columnar structure B is set as C, the relationship between Cand Csatisfies 0.4&#x2264;C/C&#x2264;1.1.

Dielectric thin film and electronic component

A dielectric film containing an alkaline earth metal oxide having a NaCl type crystal structure as a main component, wherein the dielectric film has a (111)-oriented columnar structure in a direction perpendicular to the surface of the dielectric film, and in a Cu&#x2014;K&#x3b1; X-ray diffraction chart of the dielectric film, a half width of the diffraction peak of (111) is in a range of from 0.3&#xb0; to 2.0&#xb0;.

A dielectric composition containing a complex oxide represented by the formula of ABCOas the main component, wherein A represents Ba, B represents at least one element selected from the group consisting of Ca and Sr, C represents at least one element selected from the group consisting of Ta and Nb, and &#x3b1;, &#x3b2; and &#x3b3; meet the following conditions, i.e., &#x3b1;+&#x3b2;+&#x3b3;=1.000, 0.000&#x3c;&#x3b1;&#x2266;0.375, 0.625&#x2266;&#x3b2;&#x3c;1.000, 0.000&#x2266;&#x3b3;&#x2266;0.375.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zCOas the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000&#x3c;x&#x2266;0.281, 0.625&#x2266;y&#x3c;1.000, and 0.000&#x3c;z&#x2266;0.375.

A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zCOas the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.198&#x2266;x&#x2266;0.375, 0.389&#x2266;y&#x2266;0.625, and x/3&#x2266;z&#x2266;x/3+1/9.

A dielectric composition contains a complex oxide represented by the formula of xAO-yB'O-zB&#x2033;Oas the main component, wherein A represents at least one element selected from the group made of Ba, Ca and Sr, B&#x2032; represents at least one element selected from the group made of Mg, Zn and Ni, B&#x2033; represents at least one element selected from the group made of Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.375&#x2266;x&#x2266;0.563, 0.250&#x2266;y&#x2266;0.500, and x/3&#x2266;z&#x2266;x/3+1/9. An electronic component using the dielectric composition is also provided.

A hologram recording material includes a polymerizable monomer (A) that is active in radical polymerization but is substantially inactive in cationic polymerization, a polymerizable monomer (B) that is active in cationic polymerization but is substantially inactive in radical polymerization, and an initiator system (C) that polymerizes at least one of the polymerizable monomer (A) and the polymerizable monomer (B) through irradiation with light. The polymerizable monomer (A) and the polymerizable monomer (B) each have, in its structure, a moiety selected from the group consisting of aromatic rings, halogen atoms other than a fluorine atom, and sulfur atoms not derived from a cyclic sulfide or a mercapto group. A hologram recording medium includes a recording layer composed of the hologram recording material.

Hologram recording material and hologram recording medium

An optimal recording exposure is determined by varying in the first to nth stages the recording exposure with a write laser beam to record a bright pattern image and a dark pattern image in each stage as the first to nth bright pattern images and the first to nth dark pattern images, respectively; irradiating the respective pattern images with a read beam to detect the intensity of a diffracted beam from the central portion of each image of the bright and dark patterns; calculating Sa/Sb=SNR, . . . , and Sa/Sb=SNR, where Sato Saare the intensity of a diffracted beam from the first to nth bright pattern images and Sbto Sb, are the intensity of s diffracted beam from the first to nth dark pattern images; and determining a recording exposure which is given at the SNRbeing the maximum value of the resulting SNRto SNR.

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Tokyo, Japan

Shohei Fujii