Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Shogo Okita

Atsushi Harikai

Noriyuki Matsubara

Akihiro Itou

Mitsuru Hiroshima

Hidefumi Saeki

Syouzou Watanabe

Hidehiko Karasaki

Hiroyuki Suzuki

Hiromi Asakura

Mitsuhiro Okune

Toshiyuki Takasaki

Toshihiro Wada

Ryuzou Houchin

Bunzi Mizuno

Takahiro Miyai

Tomohiro Okumura

Naoaki Takeda

Katsumi Takano

Ryota Furukawa

Bunji Mizuno

Kiyoshi Arita

Gaku Sugahara

Tetsuhiro Iwai

Yoshiyuki Wada

Tatsuhiro Mizukami

Yoshimasa Inamoto

Koji Tamura

Tutomu Sakurai

Yasuhiro Onishi

Seiya Nagano

Bunji Miizuno

Ryuuzou Houtin

An electronic component cleaning method including: a preparation step of preparing an electronic component having a first surface covered with a protective film, a second surface opposite to the first surface, a sidewall between the first and second surfaces, and an adhering matter adhering to the sidewall; and a sidewall cleaning step of cleaning the sidewall. The sidewall cleaning step includes a deposition step of depositing a first film on the protective film and a surface of the adhering matter, using a first plasma, and a removal step of removing the first film deposited on the surface of the adhering matter, together with at least part of the adhering matter, using a second plasma. In the sidewall cleaning step, the deposition step and the removal step are alternately repeated a plurality of times, so as to allow the protective film to continue to exist.

Cleaning method of electronic component and manufacturing method of element chip

A disclosed plasma processing apparatusincludes: a chamberhaving an opening; a stagedisposed in the chamber, the stage for placing an object to be processed; a dielectric memberclosing the opening; and a plasma generation unitdisposed on the opposite side to the chamberwith reference to the dielectric member, and configured to, when applied with a high-frequency power, generate a plasma in the chamber. The plasma generation unithas a first coilincluding one or a plurality of first conductorsconnected in parallel with each other, and a second coildisposed so as to surround the first coiland including a plurality of second conductorsconnected in parallel with each other. The number of the second conductorsis greater than the number of the first conductors

Plasma processing apparatus

A method including: a step of preparing a substrate that includes a first layer having a first principal surface provided with a dicing region, and a mark, and a second principal surface, and includes a semiconductor layer; a step of covering a first region corresponding to the mark on the second principal surface, with a resist film; a step of forming a metal film on the second principal surface; a step of removing the resist film, to expose the semiconductor layer corresponding to the first region; a step of imaging the substrate, with a camera, to detect a position of the mark through the semiconductor layer, and calculating a second region corresponding to the dicing region on a surface of the metal film; and a step of irradiating a laser beam to the second region, to remove the metal film and expose the semiconductor layer corresponding to the second region.

Element chip manufacturing method and substrate processing method

The element chip manufacturing method includes: a preparing process of preparing a substrateincluding a plurality of element regions EA and a dividing region DA, the substratehaving a first principal surfaceX and a second principal surfaceY; a groove forming process of forming a groovein the dividing region DA from the first principal surfaceX side; and a grinding process of grinding the substratefrom the second principal surfaceY side, to divide the substrateinto a plurality of element chips. The grooveincludes a first regionconstituted by a side surface having a first surface roughness, and a second regionconstituted by a side surface having a second surface roughness larger than the first surface roughness. In the grinding process, grinding of the substrateis performed until reaching the first regionof the groove

Element chip manufacturing method

A plasma processing apparatus including: a chamber; a plasma generation unit configured to generate a plasma in the chamber; a stagefor placing a conveying carrier, the stage provided in the chamber; a coverfor covering at least part of the conveying carrier placed on the stage; a relative position change unit capable of changing a relative distance between the coverand the stageto a first distance and to a second distance smaller than the first distance; a determination unit configured to determine a placed state of the conveying carrier; and a control unit. The determination unit determines the placed state of the conveying carrier while the distance between the coverand the stageis the first distance, and the plasma processing is performed while the distance between the coverand the stageis the second distance.

Plasma processing apparatus and plasma processing method

Disclosed is a method for producing element chips. The method includes: a preparing step of preparing a substratethat is held on a holding sheetthat is supported by a frame, the substrate including element regions and dicing regions; a protective film forming step of forming a protective filmso as to cover the frame, the holding sheet, and the substrate; a patterning step of removing a part of the protective filmso as to expose the dicing regions of the substrate; a plasma dicing step including a process that uses a plasma that contains fluorine, the plasma dicing step being a step of individualizing the substrateinto a plurality of element chips; and a fluorine removing step of removing, together with the protective film, fluorine attached to the protective filmin the plasma dicing step.

Method for producing element chips

Disclosed is a plasma processing apparatusincluding a chamber, a stage, a dielectric member, a cover, a gas introduction path, and an induction coil. The induction coilincludes a first induction coilinstalled so as to overlap a central region Rof the dielectric member, and a second induction coilinstalled so as to overlap a peripheral region Routside the central region Rof the dielectric member. The coverhas a first gas holeformed at a position overlapping the central region Rand a second gas holeformed at a position overlapping the peripheral region R. The gas introduction pathhas a first gas introduction pathcommunicating with the first gas holeand a second gas introduction pathcommunicating with the second gas hole

Plasma processing apparatus and method for using plasma processing apparatus

A plasma processing method including: a process of placing a work piece on a stage provided in a chamber, the work piece including a substrate and a holding member having an adhesive layer on a surface and holding the substrate via the adhesive layer, and having an exposed portion where the adhesive layer is exposed outside the substrate; and a plasma etching process of etching the substrate with a plasma generated in the chamber, with the exposed portion exposed to the plasma. In response to occurrence of an interruption in the plasma etching process, a cleaning process of exposing a surface of the substrate to a plasma containing an oxidizing gas is performed, and then the plasma etching process is resumed.

Plasma processing method

An etching method including: a preparation step of preparing a resin layer and an electronic component supported thereby; and a resin etching step of etching the resin layer. The electronic component has a first surface covered with a protective film, a second surface opposite thereto, and a sidewall therebetween. The second surface is facing the resin layer. The resin layer is larger than the electronic component when seen from the first surface side. The resin etching step includes: a deposition step of depositing a first film, using a first plasma, on a surface of the protective film and a surface of the resin layer; and a removal step of removing, using a second plasma, the first film deposited on the resin layer and at least part of the resin layer. The deposition and removal steps are alternately repeated, with the protective film allowed to continue to exist.

Etching method and element chip manufacturing method

An element chip manufacturing method including: attaching a substrate via a die attach film (DAF) to a holding sheet; forming a protective film that covers the substrate; forming an opening in the protective film with a laser beam, to expose the substrate in the dicing region therefrom; exposing the substrate to a first plasma to etch the substrate exposed from the opening, so that a plurality of element chips are formed from the substrate and so that the DAF is exposed from the opening; exposing the substrate to a second plasma to etch the die attach film exposed from the opening, so that the DAF is split so as to correspond to the element chips; and detaching the element chips from the holding sheet, together with the split DAF. The DAF is larger than the substrate. The method includes irradiating the laser beam to the DAF protruding from the substrate.

Element chip isolation method using laser grooving and plasma etching

A plasma processing apparatus for plasma processing a substrate held on a conveying carrier, the carrier including a holding sheet and a frame supporting an outer periphery of the holding sheet. The apparatus includes a controller that controls a plasma generator, an electrostatic adsorption mechanism, and a lifting system, to sequentially execute: an adsorption step allowing the substrate to be adsorbed electrostatically to a stage; an etching step of exposing the substrate adsorbed electrostatically to the stage to an etching plasma; a frame separation step of lifting the support, to separate the frame away from the stage, with at least part of the holding sheet kept in contact with the stage; a holding sheet separation step of separating the holding sheet away from the stage; and a static elimination step of exposing the substrate separated away from the stage to a static elimination plasma.

Plasma processing apparatus, plasma processing method, and element chip manufacturing method

A manufacturing process of an element chip comprises a preparing step for preparing a substrate having first and second sides opposed to each other, the substrate containing a semiconductor layer, a wiring layer and a resin layer formed on the first side, and the substrate including a plurality of dicing regions and element regions defined by the dicing regions. Also, the manufacturing process comprises a laser grooving step for irradiating a laser beam onto the dicing regions to form grooves so as to expose the semiconductor layer along the dicing regions. Further, the manufacturing process comprises a dicing step for plasma-etching the semiconductor layer along the dicing regions through the second side to divide the substrate into a plurality of the element chips. The laser grooving step includes a melting step for melting a surface of the semiconductor layer exposed along the dicing regions.

Manufacturing process of element chip using laser grooving and plasma-etching

A plasma processing apparatus that performs plasma processing to a substrate held on a transport carrier including a frame and a holding sheet that covers an opening of the frame includes: a transport mechanism that transports the transport carrier; a position measuring section that measures a position of the substrate to the frame; a plasma processing section that includes a plasma processing stage on which the transport carrier is loaded and a cover that covers the frame and a part of the holding sheet loaded on the plasma processing stage, and has a window section for exposing a part of the substrate; and a control section that controls the transport mechanism such that the transport carrier is loaded on the plasma processing stage to satisfy a positional relationship between the window section and the substrate based on the position information of the substrate to the frame.

A plasma processing method, including: a trenched substrate preparation process of preparing a trenched substrate having trenches having a bottom exposing an oxide film; and an oxide film removal process of exposing the trenched substrate to a plasma, to remove the oxide film. The oxide film removal process includes a plurality of cycles, each cycle including: an oxide film etching step of etching the oxide film; and a cleaning step of removing an attached matter on inner walls of the trenches, after the oxide film etching step.

Plasma processing method, and element chip manufacturing method

A dry etching apparatus plasma processes a wafer held by a carrier having a frame and an holding sheet. The carrier is placed on an electrode unit of a stage provided in a chamber. The electrode unit is cooled by a cooling section configured to cool the electrode unit. An upper face of the electrode unit is at least as large as the back side of the carrier. The holding sheet and the frame are cooled effectively by the heat transfer to the stage.

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Hyogo, Japan

Shogo Okita