Fuji Electric Co., Ltd.

Fuji Electronics Co., Ltd.

Shogo Ogawa

Shuangching Chen

Sayaka Yamamoto

A semiconductor device includes a switching element including a control electrode, a first main electrode, and a second main electrode: a gate driver connected between the control electrode and the first main electrode, configured to transmit a gate drive signal for driving the control electrode; a Miller voltage detector detecting a Miller voltage between the control electrode and the first main electrode when the switching element turns off; a current value detector detecting a principal current flowing through the switching element; and a temperature calculator calculating a temperature of the switching element from the detected Miller voltage and principal current.

Semiconductor device

A drive unit of a semiconductor element including: a drive circuit for driving a control electrode of a voltage control semiconductor element to which a freewheeling diode is connected in anti-parallel; a resistor connected between the control electrode and the drive circuit; a capacitor having one terminal connected between the resistor and the control electrode; and a switch element connected between another terminal of the capacitor and a low-voltage-side electrode of the voltage control semiconductor element, wherein a control electrode of the switch element is connected to a connection point of the resistor and the capacitor.

Drive unit of semiconductor element

In order to realize a thermistor on a base substrate without restricting the layout of a wiring layer, a thermistor mounting apparatus is provided, the thermistor mounting apparatus including a base substrate, and a thermistor component provided over the base substrate, in which the thermistor component has an insulating substrate, an electrode provided over the insulating substrate, and a thermistor provided over the insulating substrate and electrically connected to the electrode.

Thermistor mounting apparatus and thermistor component

A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided at low cost and with broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module on an upper arm side and a second semiconductor module on a lower arm side are made using an existing package, and the semiconductor modules and are used to configure an upper and lower arm kit. Further, the upper and lower arm kit is used to configure a three-level inverter. These devices can be formed using existing packages, and semiconductor modules, the upper and lower arm kit, and the three-level inverter can be therefore provided at low cost and with broad current ratings and voltage ratings.

Semiconductor module, upper and lower arm kit, and three-level inverter

A semiconductor module, an upper and lower arm kit, and a three-level inverter can be provided at low cost and with broad current ratings and voltage ratings using existing packages, without developing new packages. A first semiconductor module () on an upper arm side and a second semiconductor module () on a lower arm side are made using an existing package, and the semiconductor modules () and () are used to configure an upper and lower arm kit (). Further, the upper and lower arm kit () is used to configure a three-level inverter (). These devices can be formed using existing packages (), and semiconductor modules (), (), the upper and lower arm kit (), and the three-level inverter () can be therefore provided at low cost and with broad current ratings and voltage ratings.

A power conversion device for driving a load, including a power conversion device main body configured to receive an input of a power supply voltage and to drive the load, and a brake circuit configured to protect the power conversion device main body from overvoltage applied thereto. The brake circuit includes a Zener diode that becomes conductive when the voltage applied to the power conversion device main body exceeds a predetermined value, to thereby suppress the voltage.

Power conversion device

A circuit assembly is disclosed which includes first and second substrates disposed on a heat dissipation base, and first and second semiconductor elements mounted on the first and second substrates. The first and second substrates are wired together, and three main electrode terminals are provided when the first and second semiconductor elements are connected in series, while two main electrode terminals are provided when the first and second semiconductor element are connected in parallel. In both cases, the circuit assembly is covered with a common exterior case so that one portion of each main electrode terminal or one portion of each main electrode terminal is exposed. Parts used in the circuit assembly are shared, and by changing the wiring between the first and second substrates, semiconductor modules with different functions are realized at low cost.

Semiconductor device and manufacturing method thereof

A packing device for semiconductor devices with lead terminals includes a packing box, partitions for separating a space in the packing box, and a cover. A conductive sponge used as a cushioned packing material is attached to the back surface of the cover. The semiconductor devices are placed in the packing box 3 with the lead terminals 2 facing upwardly. In this packed state, the conductive sponge is pressed against the lead terminals to collectively hold the semiconductor devices securely in the box. Thus, short-circuitting of the lead terminals is made to prevent gate of the semiconductor devices from breaking down as a result of electrostatic voltage.

Growing community of inventors

Matsumoto, Japan

Shogo Ogawa