Sharp Kabushiki Kaisha Corporation

Merck Patent Gmbh

Shogo Murashige

Hirohiko Nishiki

Izumi Ishida

Tohru Okabe

Yujiro Takeda

Shinji Nakajima

Takeshi Hara

Hiroshi Matsukizono

Tomohiro Kosaka

Akihiro Oda

Kohhei Tanaka

Naofumi Yoshida

Toshiaki Nonaka

Yuhichi Saitoh

Atsuko Noya

Hirohide Mimura

An organic EL display device has a frame region provided with a first dam wall and a second dam wall to surround a display region. The first dam wall and the second dam wall include: a first resin wall layer; a first conductive wall layer covering the first resin wall layer; a second resin wall layer over the first resin wall layer through the first conductive wall layer; and a second conductive wall layer covering the second resin wall layer. The second resin wall layer is positioned between: a step portion included in the first conductive wall layer and covering a peripheral end face of the first resin wall layer; and a portion included in the second conductive wall layer and corresponding to the step portion of the first conductive wall layer.

Display device for preventing conductive wall layers delaminating from one another and method for manufacturing same

An active matrix substrate of an embodiment of the present invention includes a substrate and a plurality of oxide semiconductor TFTs supported on the substrate. Each oxide semiconductor TFT includes a lower gate electrode provided on the substrate, a gate insulating layer covering the lower gate electrode, an oxide semiconductor layer provided on the gate insulating layer, a source electrode which is in contact with the source contact region of the oxide semiconductor layer, a drain electrode which is in contact with the drain contact region of the oxide semiconductor layer, an insulating layer covering the oxide semiconductor layer, the source electrode and the drain electrode, and an upper gate electrode provided on the insulating layer. When viewed in a normal direction of the substrate, the upper gate electrode does not overlap a first electrode which is one of the source electrode and the drain electrode, and a second electrode which is the other of the source electrode and the drain electrode does not overlap the lower gate electrode.

Active-matrix substrate and display device

A semiconductor device includes a substrate and an oxide semiconductor TFT supported by the substrate. The oxide semiconductor TFT includes an oxide semiconductor layer containing In, Ga, and Zn, a gate electrode, a gate insulating layer formed between the gate electrode and the oxide semiconductor layer, and a source electrode and a drain electrode that are in contact with the oxide semiconductor layer. The oxide semiconductor layer has a layered structure that includes a first layer, a second layer, and an intermediate transition layer disposed between the first layer and the second layer, and the first layer is disposed closer to the gate insulating layer side than the second layer. The first layer and the second layer have different compositions, and the intermediate transition layer has a continuously changing composition from the first layer side toward the second layer side.

Semiconductor device provided with oxide semiconductor TFT

[Problem] To provide a composition for a black matrix which is a material suitable for manufacturing a black matrix, which is suitable for a high luminance display device structure and has high heat resistance and high light-shielding properties. [Means for Solution] The present invention uses a composition for a black matrix comprising: (I) a black colorant containing carbon black having a volume average particle diameter of 1 to 300 nm; (II) a siloxane polymer to be obtained by hydrolyzing and condensing a silane compound represented by a prescribed formula in the presence of an acidic or basic catalyst; (III) surface modified silica fine particles; (IV) a thermal base generator; and (V) a solvent.

Black matrix composition, black matrix, and black matrix production method

An active matrix substrate includes: a substrate (); a peripheral circuit including a plurality of first TFTs (); and a plurality of second TFTs (), wherein each of the first and second TFTs () includes: a gate electrode (A,B); a gate insulating layer (); an oxide semiconductor layer (A,B) including a channel region (Ac,Bc), a source contact region (As,Bs) and a drain contact region (Ad,Bd), wherein the source contact region and the drain contact region are located on opposite sides of the channel region; a source electrode (A,B) that is in contact with the source contact region and a drain electrode (A,B) that is in contact with the drain contact region; the oxide semiconductor layer of the first TFTs and the second TFTs is formed from the same oxide semiconductor film; a carrier concentration in the channel regions (Ac) of the first TETs is higher than a carrier concentration in the channel regions (Bc) of the second TETs.

Active matrix substrate and method for producing same

Provided is a method for manufacturing a semiconductor device, the semiconductor device including a substrate, and an oxide semiconductor TFT that is supported by the substrate and includes an oxide semiconductor film as an active layer. The method includes: (A) preparing MO gas containing a first organometallic compound that contains In and a second organometallic compound that contains Zn; and (B) supplying gas containing the MO gas and oxygen to the substrate placed in a chamber under a condition in which the substrate is heated to 500&#xb0; C. or lower, and growing an oxide semiconductor film containing In and Zn on the substrate using an MOCVD method. Step (B) is performed under a condition in which plasma is formed in the chamber.

Method for manufacturing semiconductor device and film forming apparatus

Provided are an active-matrix substrate, a method for manufacturing the same, and a display device, which render it possible to inhibit electrostatic discharge from occurring during the process of manufacturing a display panel and suppress manufacturing cost. An IGZO film, which is positioned between a silicon oxide film included in a gate insulating film and an etch-stop layer, is annealed at 200 to 350&#xb0; C. after a passivation film for protecting a TFT is formed. As a result, the passivation film is annealed, and the IGZO film is changed from a conductor to a semiconductor. Consequently, it is not only possible to suppress the occurrence of ESD, but also possible to eliminate the need to sever an electrostatic discharge prevention circuit from a display panel, resulting in a reduced cost of manufacturing a display device.

Active matrix substrate, manufacturing method therefor and display device

A wiring delay is prevented or reduced by lowering a wiring resistance without making a wire wider. The present invention includes: a light blocking film (); a light-transmitting film (); and a first wiring layer (A) which serves as part of a wire configured to electrically control an amount of transmitted light for each pixel, the first wiring layer (A) being provided over the light blocking film (), and the light-transmitting film () being provided over the first wiring layer (A) so as to cover a side surface of the first wiring layer.

Display panel, display apparatus, and method for manufacturing display panel

Disclosed is an active matrix substrate that includes a plurality of TFTs. The active matrix substrateincludes a substrate, TFTs, a light transmission film, and a protection film Cap. The TFTs are provided on the substrateso as to correspond to a plurality of pixels, respectively. The light transmission filmis provided between the TFTs and the substrate. The protection film Capcovers an end surfaceof the light transmission film, the end surfacebeing not parallel with the substrate. The TFT includes a gate electrode, a gate insulating film, a semiconductor film, a drain electrode, and a source electrode. The protection film Capis arranged between the light transmission filmand the semiconductor film of the TFT.

Active matrix substrate, display device, and manufacturing method

An active matrix substrate includes an insulating substrate in which light-transmitting areas and a light-shielding area are formed. The active matrix substrate further includes: a light-shielding film formed in the light-shielding area on the insulating substrate, with a transparent base material containing carbon particles, the light shielding film being colored with the carbon particles; an inorganic film formed on the light-shielding film; light-transmitting films formed in the light-transmitting areas on the insulating substrate, with a transparent base material containing transparent oxidized carbon particles; gate lines provided on the inorganic film; a gate insulating film provided on the gate lines; thin film transistors provided in matrix on the gate insulating film; and data lines provided on the light-shielding film to intersect with the gate lines. The data lines are electrically connected with the thin film transistors.

Active matrix substrate, display device and display device manufacturing method

This semiconductor device is provided with: a semiconductor film that comprises an oxide semiconductor, and includes a channel region; a first inorganic insulating film formed on the semiconductor film; a first organic insulating film formed on the first inorganic insulating film; and an inorganic film group. The inorganic film group has: a first electrode comprising an inorganic conductive film formed on the first organic insulating film; a second inorganic insulating film formed on the first electrode; and a second electrode that comprises an inorganic conductive film formed on the second inorganic insulating film, and is electrically connected to the semiconductor film via openings formed in such a manner as to penetrate the first inorganic insulating film, the first organic insulating film, the first electrode and the second inorganic insulating film. The first organic insulating film is disposed between the first inorganic insulating film and the inorganic film group.

Growing community of inventors

Sakai, Japan

Shogo Murashige