Tokyo Electron Limited

Shogo Masuda

Takehisa Saito

Atsutoshi Inokuchi

Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding Hto trisilylamine into the processing container and generating plasma.

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Tokyo, Japan

Shogo Masuda