Kokusai Electric Corporation

Shogo Hayasaka

Arito Ogawa

Norikazu Mizuno

Koei Kuribayashi

Takuya Joda

There is provided a technique that includes etching a crystalline film formed on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (1) supplying a boron-containing gas to the crystalline film; and (2) supplying a halide gas to the crystalline film.

Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium

Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.

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Toyama, Japan

Shogo Hayasaka