Hitachi-high-technologies Corporation

Hitachi, Ltd.

Sho Takami

Katsuhiro Sasada

Yoichi Ose

Tsuyoshi Inanobe

Hidetoshi Morokuma

Hiroki Kawada

Makoto Ezumi

Atsushi Kobaru

Kouichi Yamamoto

Norio Satou

Kunio Nakanishi

Hideo Todokoro

Tadashi Otaka

Takashi Doi

Takashi Ohshima

Shuichi Nakagawa

Souichi Katagiri

Yuji Kasai

Manabu Shirakihara

The present invention provides a charged particle beam apparatus that keeps the degree of vacuum in the vicinity of the electron source to ultra-high vacuum such as 10to 10Pa even in the state where electron beams are emitted using a non-evaporable getter pump and is not affected by dropout foreign particles. The present invention includes a vacuum vessel in which a charged particle source (electron source, ion source, etc.) is disposed and a non-evaporable getter pump disposed at a position that does not directly face electron beams and includes a structure that makes the non-evaporable getter pump upward with respect to a horizontal direction to drop out foreign particles into a bottom in a groove, so that the foreign particles dropped out from the non-evaporable getter pump do not face an electron optical system. Or, the present invention includes a structure that is covered by a shield means, or a means that is disposed immediately on a surface of the non-evaporable getter pump but at a position where the electron beams are not seen and has a concave structure capable of trapping the dropout foreign particles on a lower portion of the non-evaporable getter pump.

Charged particle beam apparatus

An image forming method and a charged particle beam apparatus suitable for suppressing the inclination of charging when scanning a two-dimensional area with a charged particle beam. A third scanning line located between a first scanning line and a second scanning line is scanned. After the first, second and third scanning lines have been scanned, a plurality of scanning lines are scanned between the first and third scanning lines and between the second and third scanning lines.

Image forming method and charged particle beam apparatus

An object of the present invention is to provide a pattern measuring method and an electron microscope that achieve truly high measurement throughput by achieving both precise location of a measurement target position and high-speed movement of the scanning position of an electron beam to the measurement target position. In order to attain the object described above, according to an aspect of the present invention, there is provided a pattern measuring method and an apparatus that move the scanning position of an electron beam based on coordinate information about a first pattern, which is a target to be measured with the electron beam, move the scanning position of the electron beam to a region comprising a second pattern, the relative distance of which from the first pattern is previously registered, in a case where detection of the first pattern at the point of arrival fails, and move the scanning position of the electron beam based on detection of the second pattern and information about the relative distance.

Pattern measuring method and electron microscope

A structure of an electron beam apparatus having shielding properties for shielding against an environmental magnetic field is provided. The electron beam apparatus comprises a mirror barrel for housing a magnetic lens for converging an electron beam onto a specimen and a specimen chamber for housing the specimen, wherein a non-magnetic material having conductivity is used as a material for at least one of the mirror barrel and a main body of the specimen chamber. The material for the mirror barrel or the main body of the specimen chamber is an aluminum alloy and a thickness of a sidewall of the mirror barrel or the main body of the specimen chamber is 10 mm or more. A magnetic plate having a thickness smaller than that of the sidewall of the mirror barrel or the main body of the specimen chamber is provided on an inner sidewall of the mirror barrel or the main body of the specimen chamber.

Electron beam apparatus and method for production of its specimen chamber

Both wafers on which copper wiring was performed and wafers on which non-copper wiring was performed can be inspected by a single unit of electron microscopic inspection apparatus with no possibilities of the wafers being contaminated with copper. All elements within the apparatus that come in contact with wafers, such as hands of a wafer transporter, are duplicated or more and one of the elements that contact wafers is used appropriately for the wafers under inspection which may be either the wafers on which copper wiring was performed or the wafers on which non-copper wiring was performed.

Electron microscopic inspection apparatus

A scanning electron microscope using the retarding method and the boosting method includes a sample holder for holding a sample on the sample holder; a shield electrode arranged between an object lens and the sample, in which an aperture for passing said primary electron beam is formed; a negative-voltage applying circuit for applying a negative voltage to the sample holder and the shield electrode; an acceleration tube located in an electron-beam passing hole in the object lens, provided to pass a primary electron beam, for further accelerating the primary electron beam; and a control electrode located between the acceleration tube and the sample, in which an aperture whose size is smaller than the aperture formed in said shield electrode is provided to pass the primary electron beam, a positive voltage in the positive direction to the negative voltage being applied to the control electrode, superimposed on the negative voltage.

Scanning electron microscope

In the electron microscope, a degree of sample contamination caused by irradiating electron beams to a sample can be suppressed to an allowable range. The electron microscope is comprised of: means for directly measuring an electron beam irradiation current to a sample; time measuring means for measuring irradiation time of electron beams to an observation region on the sample; and means for calculating a dose of the electron beams irradiated to the observation region based upon the measured electron beam irradiation current, the measured electron beam irradiation time, and preset observation magnification.

Electron microscope

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Hitachinaka, Japan

Sho Takami