Tokyo Electron Limited

Sho Saitoh

Yoshimitsu Kon

Masatsugu Makabe

Takanori Eto

Atsuki Hashimoto

A plasma processing method executed by a plasma processing apparatus with a chamber is provided. The method includes (a) providing in the chamber a substrate that includes an etching film and a mask film, the substrate including a first region where the etching film is exposed and a second region where the mask film is exposed, (b) supplying into the chamber a processing gas including a carbon-containing gas to generate plasma from the processing gas to etch the etching film and to form a protective film on the mask film, and (c) supplying the processing gas into the chamber to generate plasma from the processing gas to further etch the etching film and to remove at least part of the protective film. (b) includes a first period and a second period, and a flow rate of the carbon-containing gas in the first period is greater than a flow rate of the carbon-containing gas in the second period, and (c) includes a third period and a fourth period, and a flow rate of the carbon-containing gas in the third period is less than the flow rate of the carbon-containing gas in the second period and a flow rate of the carbon-containing gas in the fourth period.

Plasma processing method and plasma processing system

An etching method includes mounting a substrate on a stage in a processing chamber, the substrate including a laminate film. The etching method includes supplying process gas to the processing chamber, the process gas including at least one of fluorocarbon gas or hydrofluorocarbon gas. The etching method includes selecting, based on a combination of material of a silicon-containing insulating layer and material of an underlying layer, a surface temperature range of at least one member of a first member or a second member in the processing chamber, the first member facing the substrate, and the second member being provided to encircle the substrate. The etching method includes adjusting a surface temperature of the one member to be within the selected surface temperature range. The etching method includes forming a plasma in the processing chamber to which the process gas is supplied, thereby etching the silicon-containing insulating layer.

Growing community of inventors

Miyagi, Japan

Sho Saitoh