Murata Manufacturing Co., Ltd.

Sho Nagatomo

Tetsuya Kimura

Takashi Yamane

Katsuya Daimon

Ventsislav Yantchev

Kazunori Inoue

Hideki Iwamoto

Takuya Koyanagi

Syunsuke Kido

Bryant Garcia

Minefumi Ouchi

Douglas Jachowski

Naohiro Nodake

Yuta Ishii

An acoustic wave device includes a piezoelectric film and an IDT electrode on the piezoelectric film. The IDT electrode includes first and second busbars, at least one first electrode finger, and at least one second electrode finger. When an overlap region is defined as a region in which the first and second electrode fingers overlap each other in an acoustic wave propagation direction, points A, B, C, and D, defined as follows, are all outside the cavity when, at the points A, B, C, and D, xa>about 25 μm, ya>about 25 μm, xb>about 25 μm, yb>about 25 μm, xc>about 25 μm, yc>about 25 μm, xd>about 25 μm, and yd>about 25 μm.

Acoustic wave device

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction intersecting a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave in a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. At least a portion of each of the first and second electrodes is embedded in the piezoelectric layer.

An acoustic wave device is provided that includes a piezoelectric layer and first and second resonators. The first resonator includes a first functional electrode and a first dielectric film on the piezoelectric layer. The second resonator includes a second functional electrode and a second dielectric film on the piezoelectric layer. The piezoelectric layer includes first and second resonator portions respectively including portions of the first and second resonators. Moreover, a resonant frequency of the first resonator is lower than that of the second resonator. A thickness of the first resonator portion is greater than that of the second resonator portion, and ts/tp≤ts/tpis satisfied, where tp, tp, ts, and tsare respectively thicknesses of the first and second resonator portions and the first and second dielectric films.

In an acoustic wave device, a piezoelectric layer is provided directly or indirectly on a support substrate, an IDT electrode is provided on the piezoelectric layer, an overlap region includes a middle region and first and second edge regions, and first and second conductive layers are provided on a second main surface of the piezoelectric layer to overlap at least some portions of the first and second edge regions in plan view and at least some portions of first and second busbars in plan view.

Acoustic wave device and ladder filter

An acoustic wave device includes a piezoelectric layer and first and second electrodes facing each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness slip first-order mode. The acoustic wave device includes first and second resonators. Each of the first and second resonators includes the first and second electrodes, and a setting portion including a setup region where the first and second electrodes are provided in the piezoelectric layer. The thickness of each of the first and second resonators excludes the thickness of the first and second electrodes included in the resonator. The thickness of the first resonator is different from the thickness of the second resonator.

An acoustic wave device includes a semiconductor support including a principal surface, a piezoelectric layer on the principal surface of the semiconductor support, and an IDT electrode on a principal surface of the piezoelectric layer. The IDT electrode includes first and second busbars, and first and second electrode fingers. The IDT electrode includes first gaps between the first busbar and respective second electrode fingers. A recess is provided in at least a portion of the semiconductor support substrate overlapping the first gaps as viewed in plan. No recess is provided in at least a portion of the semiconductor support substrate overlapping the IDT electrode as viewed in plan. The recess opens toward the piezoelectric layer.

An acoustic wave device includes a support substrate including a cavity portion and a support portion, a piezoelectric film on the support portion and including a first and second main surfaces, a functional electrode on the first main surface, and a heat dissipation film on at least one of the first and second main surfaces and includes a semiconductor or an insulator. The functional electrode includes at least one pair of first and second electrodes. When a thickness of the piezoelectric film is dx and a middle-to-middle distance between the first and second electrodes is p, dx/p is about 0.5 or less. The heat dissipation film overlaps at least a portion of the support portion in plan view. A thermal conductivity of the heat dissipation film is higher than a thermal conductivity of the piezoelectric film, and a thickness of the heat dissipation film is less than the thickness of the piezoelectric film.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm.

Transversely-excited film bulk acoustic resonator with symmetric diaphragm

An acoustic wave device includes a piezoelectric layer that is made of lithium niobate or lithium tantalate, and a plurality of pairs of electrodes opposed to each other in a direction intersecting with a thickness direction of the piezoelectric layer, in which a bulk wave in a thickness shear primary mode is used or d/p is about 0.5 or lower when a thickness of the piezoelectric layer is d and a distance between centers of mutually adjacent electrodes among the plurality of pairs of electrodes is p. The plurality of pairs of electrodes include at least one pair of first electrodes of a first acoustic wave resonator and at least one pair of second electrodes of a second acoustic wave resonator. A direction orthogonal to a longitudinal direction of the second electrodes in the second acoustic wave resonator is inclined at an angle that is greater than 0° and smaller than 360° with respect to a direction orthogonal to a longitudinal direction of the first electrodes in the first acoustic wave resonator.

An acoustic wave device further includes a piezoelectric layer and first and second electrodes, first and second divided resonators, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer overlaps at least a portion of a first region of the piezoelectric layer. The second energy confinement layer overlaps at least a portion of a second region of the piezoelectric layer. The support substrate includes a wall portion between the first and second energy confinement layers.

An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction crossing a thickness direction of the piezoelectric layer. The acoustic wave device utilizes a bulk wave of a thickness-shear primary mode. The material of the piezoelectric layer is lithium niobate or lithium tantalate. The first and second electrodes include aluminum layers, respectively, on the piezoelectric layer. An orientation direction of a crystal of each of the aluminum layers is a direction orthogonal or substantially orthogonal to a second principal surface on the piezoelectric layer side of each of the aluminum layers.

An acoustic wave device includes a piezoelectric layer, a first electrode, a second electrode, a first divided resonator, a second divided resonator, and a support substrate. The support substrate includes first and second energy confinement layers. The first energy confinement layer at least partially overlaps with a first region of the piezoelectric layer. The second energy confinement layer at least partially overlaps with a second region of the piezoelectric layer. The first and second energy confinement layers are integrally provided in the support substrate.

Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate having a surface. A back surface of a single-crystal piezoelectric plate is attached to the surface of the substrate except for a portion of the piezoelectric plate forming a diaphragm spanning a cavity in the substrate. An interdigital transducer (IDT) is formed on a front surface of the piezoelectric plate with interleaved IDT fingers of the IDT disposed on the diaphragm. Back-side fingers are formed the back surface of the diaphragm. A pitch of the IDT fingers and a pitch of the back-side fingers are substantially equal.

An acoustic wave device includes a piezoelectric layer and first and second electrodes. The first and second electrodes face each other in a direction intersecting with a thickness direction of the piezoelectric layer. The acoustic wave device uses a bulk wave of a thickness-shear primary mode. A material of the piezoelectric layer is lithium niobate or lithium tantalate. The piezoelectric layer is on a first main surface of the silicon substrate. The acoustic wave device further includes a trap region on a side of a second main surface of the piezoelectric layer.

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Nagaokakyo, Japan

Sho Nagatomo