Sumitomo Chemical Company, Limited

Sho Kanesaka

Shota Naito

Tomoya Kashiki

Hidekazu Yoshida

Daisuke Inokuchi

Takayuki Okachi

Akiko Kishida

Takeshi Miyamoto

The present invention relates to an ink composition including a semiconductor nanoparticle (1) which contains a perovskite compound, and a curable resin composition (2), in which the ink composition may further include a solvent (3), a value of Z in Formula (a) of Z=(O2+O3+N2+N3)/(C2+C3) is 0.37 or less, O2, N2, and C2 represent the number of O atoms, the number of N atoms, and the number of C atoms, respectively, in the curable resin composition (2), and O3, N3, and C3 represent the number of O atoms, the number of N atoms, and the number of C atoms, respectively in the solvent (3).

Ink composition, film, and display

To reduce a dark current. In a photoelectric conversion element () including an anode (), a cathode (), and an active layer () provided between the anode and the cathode, the active layer contains a p-type semiconductor material that is a polymer compound having a polystyrene-equivalent weight average molecular weight of 40,000 or more and 200,000 or less, and an n-type semiconductor material. On an image obtained by binarizing an image of the active layer observed by a transmission electron microscope, the junction length between a phase of the p-type semiconductor material and a phase of the n-type semiconductor material is 130 &#x3bc;m or more and less than 200 &#x3bc;m per square micrometer of the area of the binarized image.

Photoelectric conversion element

A film comprising a polymer compound and a low molecular weight compound having carrier transportability, wherein the content of the low molecular weight compound is 5 to 40 parts by mass with respect to 100 parts by mass of the sum of the polymer compound and the low molecular weight compound, the diffraction intensity A specified by the following measuring method A is 3 to 50, and the intensity ratio (A/B) of the diffraction intensity A specified by the following measuring method A to the diffraction intensity B specified by the following measuring method B is 30 or less: (Measuring method A) the diffraction intensity A is the maximum diffraction intensity in a range of scattering vector of 1 nmto 5 nmin a profile obtained by an Out-of plane measuring method using a film X-ray diffraction method; (Measuring method B) the diffraction intensity B is the maximum diffraction intensity in a range of scattering vector of 10 nmto 21 nmin a profile obtained by an In-plane measuring method using a film X-ray diffraction method.

Film and organic semiconductor device containing the film

Growing community of inventors

Chiba, Japan

Sho Kanesaka