Toyoda Gosei Co., Ltd.

Sho Iwayama

Masayoshi Koike

Takashi Hatano

A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped AlGaN n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 &#x212b; in thickness of GaN barrier layerand about 35 &#x212b; in thickness of GaInN well layerare laminated alternately, Mg-doped GaN p-guide layer, Mg-doped AlGaN p-layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

Method for producing a group III nitride compound semiconductor laser

A semiconductor laser comprises a sapphire substrate, an AlN buffer layer, Si-doped GaN n-layer, Si-doped Al Ga N n-cladding layer, Si-doped GaN n-guide layer, an active layer having multiple quantum well (MQW) structure in which about 35 &angst; in thickness of GaN barrier layer and about 35 &angst; in thickness of Ga In N well layer are laminated alternately, Mg-doped GaN p-guide layer, Mg-doped Al Ga N p-layer, Mg-doped Al Ga N p-cladding layer, and Mg-doped GaN p-contact layer are formed successively thereon. A ridged hole injection part B which contacts to a ridged laser cavity part A is formed to have the same width as the width w of an Ni electrode. Because the p-layer has a larger aluminum composition, etching rate becomes smaller and that can prevent from damaging the p-guide layer in this etching process.

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Aichi, Japan

Sho Iwayama