International Business Machines Corporation

Shlomo Shlafman

Maharaj Mukherjee

Alan Edward Rosenbluth

Mark Alan Lavin

Kafai Lai

David Goren

Gregg M Gallatin

Dov Ramm

Emanuel Gofman

Benny Sheinman

Ullrich Richard Pfeiffer

Rajendran Krishnasamy

Danny Elad

Phillip Francis Chapman

Raminderpal Singh

Rachel Gordin

Ilan Efrat

Roi Carmon

Wayne H Woods

Vardy Amdursky

Alberto Valdes Garcia

Mihai A Sanduleanu

Zheng G Chen

Boris Bachelis

A multi-stage amplifier is provided that uses tunable transmission lines, as well as a calibration method for the multi-stage amplifiers. A multi-stage amplifier, comprises a plurality of tunable amplification stages, wherein each of the tunable amplification stages comprises a tunable resonator based on a transmission line having a tunable element. The tunable elements may vary a capacitance or an inductance to tune a frequency of an applied signal. A calibration method is provided for a multi-stage amplifier having a plurality of transmission lines, an input stage and an output stage. The multi-stage amplifier is calibrated by generating a signal to determine a frequency for a substantially maximum power; generating an error signal by comparing the frequency for the substantially maximum power with a desired frequency; varying a digital control code applied to each of the tunable transmission lines, input stage and output stage until the error signal satisfies predefined criteria.

Multi-stage amplifier using tunable transmission lines and frequency response calibration of same

A novel and useful fabricated variable transmission line that is tuned digitally is presented. Digital tuning of the variable transmission line enables the compensation of process variation in both the active and passive devices of the RF design. Along with several embodiments of the variable transmission line, the present invention also provides a method of compact modeling of the variable transmission line. The variable transmission line structure and compact modeling enables circuit level simulation using a parametric device that in one embodiment can be included as an integral part of a silicon foundry design kit.

Structure and compact modeling of variable transmission lines

Methods are provided for building integrated circuit transformer devices having compact and optimized architectures for use in MMW (millimeter-wave) applications. The integrated circuit transformer devices have universal and scalable architectures that can be used as templates or building blocks for constructing various types of on-chip devices for millimeter-wave applications.

Integrated circuit transformer devices for on-chip millimeter-wave applications

A method and system for design and modeling of transmission lines are provided. The method includes providing a set of models of core structures () of transmission line cells and expanding each of the models of core structures () to include different neighboring elements. The parameter characteristics of the expanded core structures (-) are compared to determine a model having a minimal sufficiently closed neighborhood environment. A closed neighborhood environment complies with design rules to ensure desired transmission line behavior in a real design environment. A model having a closed neighborhood environment can be used as a stand-alone model of the core structure describing the transmission line behavior in the actual design environment.

Method and system for design and modeling of transmission lines

A novel and useful apparatus for and method of providing noise isolation between integrated circuit devices on a semiconductor chip. The invention addresses the problem of noise generated by digital switching devices in an integrated circuit chip that may couple through the silicon substrate into sensitive analog circuits (e.g., PLLs, transceivers, ADCs, etc.) causing a significant degradation in performance of the sensitive analog circuits. The invention utilizes a deep trench capacitor (DTCAP) device connected to ground to isolate victim circuits from aggressor noise sources on the same integrated circuit chip. The deep penetration of the capacitor creates a grounded shield deep in the substrate as compared with other prior art shielding techniques.

Bias-controlled deep trench substrate noise isolation integrated circuit device structures

Methods, and program storage devices, for performing model-based optical proximity correction by providing a region of interest (ROI) having an interaction distance and locating at least one polygon within the ROI. A cut line of sample points representative of a set of vertices, or plurality of cut lines, are generated within the ROI across at least one lateral edge of the polygon(s). An angular position, and first and second portions of the cut line residing on opposing sides of an intersection between the cut line and the lateral edge of the polygon are determined, followed by generating a new ROI by extending the original ROI beyond its interaction distance based on such angular position, and first and second portions of the cut line. In this manner, a variety of new ROIs may be generated, in a variety of different directions, to ultimately correct for optical proximity.

Simultaneous computation of multiple points on one or multiple cut lines

A method and system for design and modeling of transmission lines are provided. The method includes providing a set of models of core structures () of transmission line cells and expanding each of the models of core structures () to include different neighboring elements. The parameter characteristics of the expanded core structures (-) are compared to determine a model having a minimal sufficiently closed neighborhood environment. A closed neighborhood environment complies with design rules to ensure desired transmission line behaviour in a real design environment. A model having a closed neighborhood environment can be used as a stand-alone model of the core structure describing the transmission line behaviour in the actual design environment.

Methods, and a program storage device for executing such methods, for performing model-based optical proximity correction by providing a mask matrix having a region of interest (ROI) and locating a plurality of points of interest within the mask matrix. A first polygon having a number of vertices representative of the located points of interest is computed, followed by determining a spatial relation between its vertices and the ROI. The vertices of the first polygon are then pinned to boundaries of and within the ROI such that a second polygon is formed on the ROI. The process is repeated for all vertices of the first polygon such that the second polygon is collapsed onto the ROI. This collapsed second polygon is then used to correct for optical proximity.

Performance in model-based OPC engine utilizing efficient polygon pinning method

Capacitance and inductance expressions used for modeling critical on-chip metal interconnects. A method for calculating high frequency limit capacitances Cand inductances Lof coplanar transmission line structures over silicon substrate utilizes field based expressions derived for a single coplanar T-line structures over silicon, and coupled coplanar T lines over silicon. For coupled coplanar structures, the field lines based calculation is performed separately for odd and even modes.

Method and system for calculating high frequency limit capacitance and inductance for coplanar on-chip structure

Methods, and program storage devices, for performing model-based optical lithography corrections by partitioning a cell array layout, having a plurality of polygons thereon, into a plurality of cells covering the layout. This layout is representative of a desired design data hierarchy. A density map is then generated corresponding to interactions between the polygons and plurality of cells, and then the densities within each cell are convolved. An interaction map is formed using the convolved densities, followed by truncating the interaction map to form a map of truncated cells. Substantially identical groupings of the truncated cells are then segregated respectively into differing ones of a plurality of buckets, whereby each of these buckets comprise a single set of identical groupings of truncated cells. A hierarchical arrangement is generated using these buckets, and the desired design data hierarchy enforced using the hierarchical arrangement to ultimately correct for optical lithography.

Renesting interaction map into design for efficient long range calculations

A method for trading in a financial derivative of an underlying asset includes determining a trend predictive of a future value of the asset and a predicted variance of the future value. Responsive to the trend and the variance, a density function is calculated, which is indicative of a probability distribution of the value at a first time in the future. Based on the density function at the first time, the density function is recalculated to find the probability distribution of the value at a second time, subsequent to the first time, and a trading decision is made with regard to the derivative of the asset based on the density function.

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Haifa, Israel

Shlomo Shlafman