Kla Tencor Corporation

Kla Corporation

Shlomo Eisenbach

Amnon Manassen

Vladimir Levinski

Yuri Paskover

Yoav Grauer

Anna Golotsvan

Eitan Hajaj

Gilad Laredo

Yoni Shalibo

Ariel Hildesheim

Eugene Maslovsky

A product includes at least one semiconductor substrate, multiple thin-film layers disposed on the at least one substrate, and an overlay target formed in at least one of the thin-film layers. The overlay target includes a first sub-target having a first center of symmetry and including first target features having a first linewidth, and a second sub-target having a second center of symmetry coincident with the first center of symmetry and including second target features, which have a second linewidth, greater than the first linewidth, and are adjacent to but non-overlapping with the first target features.

Multi-resolution overlay metrology targets

Metrology methods and tools are provided, which enhance the accuracy of the measurements and enable simplification of the measurement process as well as improving the correspondence between the metrology targets and the semiconductor devices. Methods comprise illuminating the target in a Littrow configuration to yield a first measurement signal comprising a &#x2212;1diffraction order and a 0diffraction order and a second measurement signal comprising a +1distraction order and a 0diffraction order, wherein the &#x2212;1diffraction order of the first measurement signal and the +1diffraction order of the second measurement signal are diffracted at 180&#xb0; to a direction of the illumination, performing a first measurement of the first measurement signal and a second measurement of the second measurement signal, and deriving metrology metric(s) therefrom. Optionally, a reflected 0diffraction order may be split to yield components which interact with the &#x2212;1and +1diffraction orders.

Off-axis illumination overlay measurement using two-diffracted orders imaging

Growing community of inventors

Migdal Haemek, Israel

Shlomo Eisenbach