Toyoda Gosei Co., Ltd.

Shizuyo Noiri

Naoki Shibata

Jun Ito

Toshiya Uemura

Masanori Murakami

Toshiaki Chiyo

Yasuo Koide

Shigemi Horiuchi

An electrode pad for a Group III nitride compound semiconductor having p-type conduction includes a triple layer structure having first, second, and third metal layers, formed on an electrode layer. A protection film with a window exposing a central portion of the third metal layer is formed by etching on the third metal layer and covers the sides of the first, second, and third metal layers. The second metal layer is made of gold (Au). The first metal layer is made of an element which has ionization potential lower than gold (Au). The third metal is made of an element which has adhesiveness to the protection film stronger than that of gold (Au). Consequently, this structure of the electrode pad improves the adhesive strength between the protection layer and the third meal layer and prevents the etching of the sides of the protection film. Furthermore, the contact resistance between the semiconductor and the electrode pad is lowered and, thus, ohmic characteristic of the electrode pad is improved.

Methods and devices related to electrode pads for p-type Group III nitride compound semiconductors

Devices related to electrode pads for p-type group III nitride compound semiconductors

A GaN type semiconductor layer having a new structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

GaN type semiconductor device

A layer comprising cobalt (Co) is formed on a p layer by vapor deposition, and a layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting pattern which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

GaN related compound semiconductor and process for producing the same

Process for producing GaN related compound semiconductor

A GaN type semiconductor layer having a structure is provided which incorporates a substrate having surface which is opposite to a GaN type semiconductor layer and which is made of Ti.

GaN type semiconductor device fabrication

A layer comprising cobalt (Co) is formed on a p,layer by vapor deposition, and layer comprising gold (Au) is formed thereon. The two layers are alloyed by a heat treatment to form a light-transmitting electrode. The light-transmitting electrode therefore has reduced contact resistance and improved light transmission properties, and gives a light-emitting patten which is stable over a long time. Furthermore, since cobalt (Co) is an element having a large work function, satisfactory ohmic properties are obtained.

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Aichi-ken, Japan

Shizuyo Noiri