Mitsubishi Electric Corporation

Shizuri Tamura

Akira Hatai

Mitsuhiko Kanda

Shinya Nakagawa

Hiroshi Nakatake

Yoshitomo Hayashi

Ryuichi Takezawa

Yasuhiro Sekimoto

Yuji Nojiri

Masashi Kaneko

A power conversion device includes a cooling fan, a cooling fan control unit that controls the drive amount of the cooling fan, and an electrolytic capacitor whose life varies according to the drive amount of the cooling fan. The cooling fan control unit controls the drive amount based on the relationship between the drive amount, the life of the cooling fan, and the life of the electrolytic capacitor.

Electronic device, control system for power conversion device, machine learning device, and method of controlling cooling fan

A transistor chip formed from a wide band gap semiconductor, on which transistor elements for an upper arm are formed is mounted on a front surface of an insulating substrate. A transistor chip formed from a wide band gap semiconductor, on which transistor elements for a lower arm are formed is mounted on a rear surface of the insulating substrate.

Power semiconductor module

A CR snubber circuit capable of increasing a reduction effect of the effective inductance component and suppressing a ringing component generated at the time of switching the switching element is obtained. A first current path formed on one surface of the substrate and a second current path formed on the other surface, which is the opposite side of the one surface of the substrate, are opposed to each other with the substrate being sandwiched therebetween, and the capacitorand the resistorare arranged such that current flows in opposite directions in the first current path and the second current path, and a band elimination filter is formed by the capacitor, the resistor, and an effective inductance component obtained by coupling an inductance component included in the first current path and an inductance component included in the second current path.

CR snubber circuit

A gate drive circuit for driving an IGBT serving as a power semiconductor device includes a constant-current gate drive circuit that charges a gate capacity of the IGBT at a constant current, and a constant-voltage gate drive circuit that is connected in parallel to the constant-current gate drive circuit between input and output terminals thereof via a series circuit constituted by a MOSFET and a resistor, and charges the gate capacity of the IGBT at a constant voltage, wherein the gate drive circuit charges the gate capacity of the IGBT using both the constant-current gate drive circuit and the constant-voltage gate drive circuit at the time of driving the IGBT.

Gate drive circuit

An inverter that drives a motor and a noise filter are arranged on a surface of a motor housing, and the inverter and the noise filter are integrated with the motor housing. The noise filter reduces a common-mode current generated by a switching operation of the inverter to flow out to a side of a three-phase power supply through the motor housing.

Growing community of inventors

Chiyoda-ku, Japan

Shizuri Tamura