Renesas Technology Corp.

Hitachi, Ltd.

Hitachi Tohbu Semiconductor, Ltd.

Other

Murata Manufacturing Co., Ltd.

Renesas Electronics Corporation

Hitachi Computer Engineering Co., Ltd.

Hitachi Microcomputer Eng. Ltd.

Shizuo Kondo

Kiichi Yamashita

Osamu Kagaya

Kenji Sekine

Tetsuaki Adachi

Yasuhiro Nunogawa

Eiichi Hase

Sakae Kikuchi

Iwamichi Kohjiro

Setsuo Ogura

Makoto Furihata

Tomonori Tanoue

Eiji Minamimura

Makoto Hayashi

Katsuyoshi Washio

Tomoyuki Watanabe

Masumi Kasahara

Osamu Takada

Takahiro Okabe

Toshinori Hirashima

Katuhiro Morisuye

Akira Takigawa

Mikio Haijima

Yoshiki Akamatsu

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

Semiconductor device

The present invention provides a power amplifier module featuring that: its output power characteristic smoothly changes as the input control voltage changes; and its control sensitivity is stable over a wide dynamic range. By same means, idling current for gain setting is supplied to a single amplifier element or all of multiple stages of amplifier elements of the power amplifier module. By making this idling current behave so as to exponentially change, relative to input control voltage, the invention enables output power control proportional to the input control voltage.

Power amplifier module

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

A resistor is provided with a plurality of turn parts whose corners have an obtuse flexional angle in order to improve the relative resistance precision. A ladder resistor can be formed with a plurality of such resistors connected in series, and various electronic devices are formed employing the ladder resistor.

Resistor and electron device employing the same

An integrated programmable logic array formed within a single silicon chip comprises a combination of a logical product gate array and a logical summation gate array. The logical product gate array is equipped with a plurality of MIS field-effect transistors whose gates are selectively driven by a plurality of input signals. Source-drain paths of these transistors are connected in series. The logical summation gate array is equipped with a plurality of inverted bipolar transistors having collector-emitter paths which are connected in parallel.

Bi-MOS PLA

A logic circuit is provided which includes a first multi-emitter transistor with its emitters coupled to a group of first input lines and a first transistor with its base coupled to the collector of said first multi-emitter transistor. A second transistor is also provided with its base coupled to the collector of said first transistor, said second transistor having a polarity opposite to that of said first multi-emitter transistor. A second multi-emitter transistor is connected with its base coupled to the collector of said second transistor and with its emitters coupled to a group of second input lines, and a third transistor is connected with its base coupled to the collector of said second multi-emitter transistor and with its collector coupled to an output line. The collector of said first multi-emitter transistor is coupled to the emitter of said second multi-emitter transistor in order to absorb minority carriers stored in the transistors. This feature significantly improves the circuit operating speed. A further feature is the provision of a logic circuit which is highly integrated and which consumes reduced amounts of electric power, while maintaining high-speed performance of the TTL circuit, by substituting a multi-collector transistor that reversely operates for an inverter portion of the TTL circuit.

Bipolar logic circuit having two multi-emitter transistors with an

A logic circuit of a large scale which consumes small amounts of electric power is comprised of a plurality of ROM portions each formed of IIL circuits. Input signal lines are commonly used to transmit input signals to the ROM portions. The plurality of ROM portions are selectively operated by ROM select signals, and outputs corresponding to the input signals are obtained from a selected ROM portion. To select a particular ROM portion out of the plurality of ROM portions, the emitters of inverse npn transistors of IIL circuits constituting the selected ROM portion are rendered to assume ground potential. In the meantime, the emitters of the inverse npn transistors of IIL circuits in the non-selected ROM portions are held in a floating condition. This makes it possible to obtain a logic circuit which consumes small amounts of electric power with a very simple construction since the non-selected ROM portions consume no power.

Logic circuit

An integrated programmable logic array formed within a single silicon chip comprises a combination of an NAND or AND gate array and an NOR or OR gate array. The NAND or AND gate array includes a plurality of bipolar transistors which are driven to operate in the forward direction by a plurality of input signals, and a plurality of Schottky barrier diodes provided between the collectors of the bipolar transistors and output signal lines. The NOR or OR gate array includes a plurality of other bipolar transistors which are driven to operate in the backward direction by a plurality of output signals from the NAND or AND gate array.

PLA with forward-conduction bipolar 'and' array and I.sup.2 L 'OR' array

Growing community of inventors

Takasaki, Japan

Shizuo Kondo