Shin-etsu Handotai Co., Ltd.

Shizuo Igawa

Wei Feng Qu

Ken Sunakawa

Weifeng Qu

A method for manufacturing a silicon single crystal wafer for a multilayer structure device including: using a silicon single crystal wafer with oxygen concentration of 12 ppma (JEITA) or higher and composing an Nregion; and performing an RTA treatment in a nitrogen-containing atmosphere and a temperature of 1225° C. or higher, a mirror-polish processing treatment, and a BMD-forming heat treatment manufacturing a silicon single crystal wafer having at least a DZ layer with a thickness of 5 to 12.5 μm and a BMD layer positioned immediately below the DZ layer and a BMD density of 1×10/cmor higher from the silicon single crystal wafer surface. During device formation, the silicon wafer surface stress is absorbed immediately below a surface layer, distortion defects are absorbed by the BMD layer, device formation region strength is enhanced, and surface layer dislocation occurrence and extension is suppressed.

Method for manufacturing silicon single crystal wafer and silicon single crystal wafer

A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer.

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Annaka, Japan

Shizuo Igawa