Agency for Science, Technology and Research

Nec Corporation

National University of Singapore

Advanced Micro Foundry Pte. Ltd.

Shiyang Zhu

Junichi Fujikata

Dim-Lee Kwong

Jun Ushida

Liang Ding

Ming Li

Patrick Guo-Qiang Lo

Alex Yuandong Gu

Chunxiang Zhu

Jagar Singh

Zhengji Xu

Ming-Bin Yu

Yuan Dong

Ting Hu

Jingde Chen

Sungjoo Lee

Edward Sing Chee Koh

Qize Zhong

Chih-Kuo Tseng

Various embodiments may relate to an electro-optic modulator. The electro-optic modulator may include a waveguide configured to carry optical light along a longitudinal length of the waveguide. The electro-optic modulator may also include a first electrically conductive sub-wavelength grating on a first side of the waveguide, the first electrically conductive sub-wavelength grating including a plurality of fingers extending substantially perpendicular to the longitudinal length of the waveguide. The electro-optic modulator may further include a second electrically conductive sub-wavelength grating on a second side of the waveguide opposite the first side, the second electrically conductive sub-wavelength grating including a plurality of fingers extending substantially perpendicular to the longitudinal length of the waveguide. The electro-optic modulator may be configured to modulate the optical light upon application of a potential difference between the first electrically conductive sub-wavelength grating and the second electrically conductive sub-wavelength grating based on Pockels effect.

Electro-optic modulator and method of forming the same

Various embodiments may provide a method of fabricating a meta-lens structure. The method may include forming a first dielectric layer in contact with a silicon wafer. The method may also include forming a second dielectric layer in contact with the first dielectric layer. A refractive index of the second dielectric layer may be different from a refractive index of the first dielectric layer. The method may further include, in patterning the second dielectric layer. The method may additionally include removing at least a portion of the silicon wafer to expose the first dielectric layer.

Meta-lens structure and method of fabricating the same

Various embodiments may provide an optical phase array. The optical phase array may include a laser source configured to emit a laser. The optical phase array may further include an integrated photonic network with n stages of optical splitters, the optical splitters being 1 &#x3c7; 2 optical splitters, each optical splitter of the integrated photonic network having an input, a first output, and a second output. The integrated photonic network may be configured to separate the laser into N outputs. Each output of the N outputs may differ from a neighbouring output of the N outputs by a constant phase difference (&#x394;&#x3c6;). N may be equal to 2 to the power of n.

Optical phase array, methods of forming and operating the same

In an electro-optic device, a stack structure including a first silicon layer of a first conductivity type and a second silicon layer of a second conductivity type has a rib waveguide shape so as to form an optical confinement area, and a slab portion of a rib waveguide includes an area to which a metal electrode is connected. The slab portion in the area to which the metal electrode is connected is thicker than a surrounding slab portion. The area to which the metal electrode is connected is set so that a range of a distance from the rib waveguide to the area to which the metal electrode is connected is such that when the distance is changed, an effective refractive index of the rib waveguide in a zeroth-order mode does not change.

Silicon-based electro-optic device

A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi) for source and drain is presented. The fabrication of YbSiis compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSifabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.

Schottky barrier source/drain n-mosfet using ytterbium silicide

Growing community of inventors

Singapore, Singapore

Shiyang Zhu