Yangtze Memory Technologies Co., Ltd.

Shiyang Yang

Huangpeng Zhang

Yu Wang

Xiang Fu

Ting Li

Huamin Cao

Yan Lu

Xu Hou

Chunfei Deng

Huiyuan Yue

Ling Ding

Methods for input/output voltage training of a three-dimensional (3D) memory device is disclosed. The method can comprise the following operations: (1) setting a reference voltage value at an on-die termination (ODT) enabled status; (2) controlling the 3D memory device to perform a write training process; (3) determining whether a further write training process is needed; (4) in response to determining that the further write training process is needed, repeating operations (1), (2) and (3); and (5) in response to determining that the further write training process is not needed, setting the reference voltage value as an optimized reference voltage value.

Input/output reference voltage training method in three-dimensional memory devices

Implementations of the present disclosure disclose a circuit for ZQ calibration. The circuit may include a logic control circuit. The logic control circuit may include a calibration code generation circuit configured to generate an initial calibration code in response to a calibration command. The logic control circuit may include a mapping conversion circuit configured to control the calibration code generation circuit to convert the initial calibration code to a target calibration code of a target adjustment step size in response to a code adjustment signal. The circuit may further include a calibration circuit configured to calibrate interface impedance of a target semiconductor device based on the target calibration code.

ZQ calibration circuit, operation method, memory and memory system

Aspects of the disclosure provide a semiconductor device. For example, the semiconductor device can include a first deserializer, a second deserializer, and a write data converter coupled to the first deserializer and the second deserializer. The first deserializer can be configured to convert serial data to parallel data based on a set of write clock signals, thus the parallel data has a first timing alignment with regard to the set of write clock signals. The second deserializer can be configured to generate a mask pattern based on the set of write clock signals, thus the mask pattern has a second timing alignment with regard to the set of write clock signals. The write data converter can be configured to generate valid data based on the parallel data and the mask pattern.

High speed memory device with data masking

In certain aspects, a circuit for ZQ resistor calibration can include a first input configured to receive a first default configuration. The circuit can also include a second input configured to receive a first calibration value based on a first comparison. The circuit can further include a first output configured to provide a first resistor code for a first resistor category. The circuit can additionally include a second output configured to provide a second resistor code for a second resistor category different from the first resistor category. The circuit can also include a first logic circuit configured to receive a signal from the first input and a signal from the second input, and provide a signal to the first output. The signal to the first output can include the first resistor code. The first resistor code can be different from the second resistor code.

ZQ resistor calibration circuit in memory device and calibration method thereof

Aspects of the disclosure provide a semiconductor memory device. The semiconductor memory device includes a memory cell array and peripheral circuitry coupled with the memory cell array. The memory cell array includes a plurality of memory cells. The peripheral circuitry includes programmable logic circuit that is configured, after the semiconductor memory device is powered on, to perform logic functions.

Growing community of inventors

Wuhan, China

Shiyang Yang