Mitsubishi Electric Corporation

Fuji Electric Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Hitachi, Ltd.

Central Research Institute of Electric Power Industry

Shiyang Ji

Kazuhiro Mochizuki

Yasuyuki Kawada

Ryoji Kosugi

Hidekazu Tsuchida

Koji Nakayama

Kazutoshi Kojima

Katsunori Asano

Hidenori Koketsu

Tetsuya Miyazawa

Tetsuro Hemmi

Hidenori Kouketsu

A manufacturing yield and reliability of a semiconductor device including a power semiconductor element is improved. A plurality of trenches DT extending in an x direction and spaced apart from each other in a y direction orthogonal to the x direction are formed in a substrate having a main crystal surface tilted with respect to a &#x3c;11-20&#x3e; direction. Also, a super-junction structure is constituted of a p-type column region PC made of a semiconductor layer embedded in the trench DT and an n-type column region NC made of a part of the substrate between the trenches DT adjacent in the y direction, and an angle error between the extending direction of the trench DT (x direction) and the &#x3c;11-20&#x3e; direction is within &#xb1;&#x3b8;. The &#x3b8; is determined by {arctan {k&#xd7; (w/h)}}/13 for the trench having a height of h and a width of w. Herein, the k is at least smaller than 2, preferably 0.9 or less, more preferably 0.5 or less, and still more preferably 0.3 or less.

Semiconductor device and manufacturing method thereof

In a silicon carbide semiconductor device, an n-type drift layer is formed on a front surface of an n-type semiconductor substrate. Next, a trench is formed in the n-type drift layer, from a surface of the n-type drift layer. Next, a p-type pillar region is formed in the trench. A depth of the trench is at least three times a width of the trench. The p-type pillar region is formed by concurrently introducing a p-type first dopant and a gas containing an n-type second dopant incorporated at an atom position different from that of the first dopant.

Silicon carbide semiconductor device and a method of manufacturing a silicon carbide semiconductor device

The present invention provides a semiconductor structure which includes at least a p-type silicon carbide single crystal layer having an &#x3b1;-type crystal structure, containing aluminum at impurity concentration of 1&#xd7;10cmor higher, and having thickness of 50 &#x3bc;m or greater. Further provided is a method for producing the semiconductor structure of the present invention which method includes at least epitaxial growth step of introducing silicon carbide source and aluminum source and epitaxially growing p-type silicon carbide single crystal layer over a base layer made of silicon carbide single crystal having &#x3b1;-type crystal structure, wherein the epitaxial growth step is performed at temperature conditions of from 1,500&#xb0; C. to 1,700&#xb0; C., and pressure conditions of from 5&#xd7;10Pa to 25&#xd7;10Pa.

Semiconductor structure, semiconductor device, and method for producing semiconductor structure

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Ibaraki, Japan

Shiyang Ji