Xiamen Sanan Optoelectronics Technology Co., Ltd.

Xiamen San'an Optoelectronics Co., Ltd

Quanzhou Sanan Semiconductor Technology Co., Ltd.

Shiwei Liu

Su-Hui Lin

Kang-Wei Peng

Anhe He

Chung-Ying Chang

Gaolin Zheng

Chia-Hung Chang

Hou-Jun Wu

Ling-Yuan Hong

Qing Wang

Dazhong Chen

Yu-Tsai Teng

Quanyang Ma

Shuo Yang

Jiangbin Zeng

Hongwei Xia

Shuijie Wang

Wen-chia Huang

Jin Xu

Zhenni Que

Ke Liu

Ho-Chia Tseng

Jiali Zhuo

Huining Wang

Baojun Shi

A light-emitting device includes a carrier substrate, a flip-chip light-emitting diode (LED) mounted onto the carrier substrate, and an electrode unit disposed between the carrier substrate and the flip-chip LED. The electrode unit includes first and second connecting electrodes that have opposite conductivity. Each of the first and second connecting electrodes includes an intermediate metal layer and a binding layer that are sequentially disposed on the flip-chip LED in such order. The binding layer includes a first portion being adjacent to the carrier substrate and forming an eutectic system with tin, and a second portion located between the first portion and the intermediate metal layer.

Flip-chip light emitting diode having connecting electrodes with multiple binding layers including eutectic system with tin

A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h) between the first area and the second area is no greater than 1 μm. A display apparatus and a lighting apparatus are also disclosed.

Light-emitting device and lighting apparatus

A light-emitting device includes an epitaxial structure that includes a first semiconductor layer, an active layer and a second semiconductor layer. The light-emitting device further has a transparent current spreading unit, a first electrode and a second electrode. The transparent current spreading unit includes a first transparent current spreading layer and a second transparent current spreading layer. The first transparent current spreading layer is doped with aluminum and has a thickness that accounts for 0.5% to 33% of a thickness of the transparent current spreading unit. The second transparent current spreading layer has a thickness greater than that of the first transparent current spreading layer. A light-emitting apparatus includes a circuit control component, and a light source that is coupled to the circuit control component and that includes the aforesaid light-emitting device.

Light-emitting device

A light-emitting device includes a substrate, a first and second mesa structures disposed on the substrate, at least one current blocking element, at least one conductive bridging element, and first and second conductive pads. The conductive bridging element is disposed on the current blocking element, and is electrically connected to the first and second mesa structures. The first and second conductive pads are electrically connected to the first and second mesa structures, respectively. The conductive bridging element has a projection image that is spaced apart from those of the first and second conductive pads in a plan view of the light-emitting device. A light-emitting module including the light-emitting device, and a display apparatus including the light-emitting device are also disclosed.

Light-emitting device, light-emitting module including the same and display apparatus including the same

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer and including a plurality of first sub-electrodes, wherein the plurality of first sub-electrodes are divided into one or more groups, and any two adjacent first sub-electrodes in the same group have a same projection distance; a second electrode disposed over and electrically coupled to the second semiconductor layer; a third electrode coupled to the plurality of first sub-electrodes and including one or more third sub-electrodes, wherein one of the third sub-electrodes corresponds to one of said one or more groups of the first sub-electrodes and connects first sub-electrodes in the group; and a fourth electrode coupled to the second electrode.

Light-emitting diode

A light-emitting diode includes: a semiconductor epitaxial structure including a first semiconductor layer, a second semiconductor layer disposed over the first semiconductor layer, an active layer disposed between the first and second semiconductor layers; a first electrode electrically coupled to the first semiconductor layer; and a second electrode disposed over and electrically coupled to said second semiconductor layer; wherein: the first electrode includes a plurality of first sub-electrodes; the second electrode includes a plurality of second sub-electrodes; and any two adjacent first sub-electrodes and/or second sub-electrodes have a same projection distance.

Growing community of inventors

Xiamen, China

Shiwei Liu