Tsinghua University

Industrial Technology Research Institute

Shiuh Chao

Hao-Min Ku

Chen-Yang Huang

Chih-Tsung Shih

Shin-Ge Lee

Tsai-Chu Hsiao

Huai-Yi Chen

Chih-T'sung Shih

Der-Ray Huang

Rong Xuan

Chu-Li Chao

Jyh-Shin Chen

Zhi-Wei Zeng

A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency.

Light emitting device having auto-cloning photonic crystal structures

A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing method of the light emitting device having auto-cloning photonic crystal structures is presented here.

Manufacturing method of light emitting device having auto-cloning photonic crystal structures

A light emitting device having auto-cloning photonic crystal structures comprises a substrate, a first semiconductor layer, an active emitting layer, a second semiconductor layer and a saw-toothed multilayer film comprising auto-cloning photonic crystal structures. The saw-toothed multilayer film provides a high reflection interface and a diffraction mechanism to prevent total internal reflection and enhance light extraction efficiency. The manufacturing methods of the light emitting device having auto-cloning photonic crystal structures are also presented.

Light emitting device having auto-cloning photonic crystal structures and manufacturing method thereof

The designed resonator system comprises a light source generating device for outputting a light source and a resonating cavity device. The resonating cavity device includes: a first waveguide with an input end for receiving the light source; a first resonator disposed adjacent to the first waveguide for receiving the light source coupled from the first waveguide in order to generate a resonating light source; a second waveguide having one end disposed adjacent to the first resonator, an adapting end for receiving the resonating light source coupled from the first resonator, and an output end; and an electro-optic modulator disposed adjacent to the other end of the second waveguide for receiving the resonating light source coupled from the second waveguide and generating an optical modulating signal by an electrical modulating signal, and the optical modulating signal is outputted from the output end of the second waveguide.

Resonator system

The present invention provides a wavelength interleaver comprising a first interleaving unit, a second interleaving unit and an adapting waveguide coupled between the first interleaving unit and the second interleaving unit; both the first interleaving unit and the second interleaving unit including an input waveguide, an output waveguide and a filter coupled between the input waveguide and the output waveguide. The present invention sets up the gap between the input waveguide and the filter, and the filter and the output waveguide for extending components usage specification of the signal transmission system. Therefore, there is no need to add unnecessary components in design, the size is smaller and the cost of the signal transmission system is reduced.

Wavelength interleaver

An electro-optical modulator includes a structural substrate, having an insulating layer on top. A waveguide layer, disposed on the insulating layer. A curving resonant MOS device, disposed on the insulating layer and having an optical coupling region with the waveguide layer.

Electro-optical modulator with curving resonator

A light emitting diode (LED) is provided. The LED at least includes a substrate, a saw-toothed multilayer, a first type semiconductor layer, an active emitting layer and a second type semiconductor layer. In the LED, the saw-tooth multilayer is formed opposite the active emitting layer below the first type semiconductor layer by an auto-cloning photonic crystal process. Due to the presence of the saw-tooth multilayer on the substrate of the LED, the scattered light form a back of the active emitting layer can be reused by reflecting and recycling through the saw-tooth multilayer. Thus, all light is focused to radiate forward so as to improve the light extraction efficiency of the LED. Moreover, the saw-tooth multilayer does not peel off or be cracked after any high temperature process because the saw-tooth multilayer has the performance of releasing thermal stress and reducing elastic deformation between it and the substrate.

Light emitting diode with embedded saw-tooth multilayer having a photonic crystal structure and process for fabricating the same

An electro-optical modulator includes a structural substrate having insulating layer. A waveguide layer is on the insulating layer. A resonant layer on the insulating layer has a curving rim adjacent to the waveguide layer to form an optical coupling region. A gate dielectric layer covers part of the resonant layer. A dielectric layer over the resonant layer covers the gate dielectric layer. The dielectric layer has a first opening exposing part of the resonant layer and a second opening exposing the gate dielectric layer. Part of the second opening is adjacent to the curving rim of the resonant layer. A first polysilicon layer on the exposed region of the resonant layer serves as an electrode. A second polysilicon layer over the dielectric layer fills the second opening and is in contact with the gate dielectric layer. Part of the second polysilicon layer covering the dielectric layer serves as an electrode.

An apparatus for coating a magneto-optical recording medium film onto a disk substrate are provided. For proceeding the sputtering processes, a sputtering target containing Tb, Fe, and Co composition is prepared and placed in a sputtering gun which is served as a sputtering source. Facing to the sputtering gun, a clamping mechanism having a plurality of clampers arranged around the clamping mechanism is provided for clamping disk substrate thereon. During sputtering processes, the clamping mechanism is rotated about its axial center, and at the same time each clamper of the clamping mechanism is rotated about its axial center respectively. The clamper is designed in a form of facing the plane of the sputtering gun at a proper tilt angle, preferably 15 degrees, so that the disk substrate may be sputtered with a uniform thickness and composition of magneto-optical recording medium film thereon.

Apparatus for simultaneously coating a film of magneto-optical recording

A polarized-light scatterometer for measuring the thickness of a film coated on the partial of a substrate, the film having a straight line edge on the surface of the substrate coated with the film. The polarized-light scatterometer is composed of means for generating an incident beam (a fixed polarization state input beam) striking the straight line edge of the film; means for detecting the intensity of a scattered beam which is scattered by the incident beam within a predetermined angular range; means for rotating the detecting means about the Z-axis within the predetermined angular range; means for adjusting the intensity of the scattered beam; means for obtaining the Mueller matrix by using the Bickel-Bailey method; means for normalizing all the elements of the Mueller matrix; means for recording the corresponding scattered angle of the scattered beam having maximum intensity variation; means for obtaining the relation diagrams between the normalized elements and the thickness of the film respectively, and all the relation diagrams are obtained under the scattered angle having maximum intensity variation; means for choosing the relation diagrams that the normalized elements have greater sensitivity to the thickness of the film; means for obtaining the values of normalized elements of an unknown thickness of the same film; means for obtaining the thicknesses of the film of unknown thickness corresponding to the relation diagrams by using the values of the normalized elements; and means for determining the thickness of the unknown thickness film by choosing common thickness among the relation diagrams.

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Hsinchu, Taiwan

Shiuh Chao