Taiwan Semiconductor Manufacturing Comp. Ltd.

Shiue Tsong Shen

Shyh-An Chi

Yun-Han Lee

Jyy Anne Lee

Cheok-Kei Lei

Hsiao-Hui Chen

Jeff Lee

Frank Y Lee

An integrated circuit includes a process voltage temperature (PVT) effect transducer responsive to a PVT effect, a PVT effect quantifier coupled to the PVT effect transducer and configured to quantify the PVT effect to provide an output, and a bias controller configured to receive the output of the PVT effect quantifier and provide a bias voltage for a substrate of an NMOS or a PMOS transistor. The bias controller is configured to compare the output received from the PVT effect quantifier to a threshold value, and decrease or increase the bias voltage depending on whether the output is higher or lower than the threshold value.

Substrate bias control circuit

A flip-flop structure with reduced set-up time is provided. The flip-flop includes the first master latch receiving a function data through the first switch controlled by a clock signal, the second master latch receiving a scan data through the second switch controlled by the clock signal, and a slave latch connected to the first master latch through the third switch controlled by the clock signal. The second master latch is coupled to the first master latch through the fourth switch controlled by the scan enable signal so that the scan enable signal controls whether the function data or the scan data becomes an output from the first master latch to the slave latch, and the slave latch is used to latch and transmit the output from the first master latch.

Fast flip-flop structure with reduced set-up time

A method and system optimizes or improves an electronic design by analyzing various signal paths in the electronic design and selecting certain critical paths, for example, failed-timing paths, to optimize. The optimizing method extracts the cascaded logic gates to create a megacell representing the function of the critical path, compare test parameters of the megacell with the critical path, and incorporate the megacell into the electronic design if the test parameters improve by an optimizing constraint.

Automatic flow of megacell generation

A substrate bias control circuit includes a process voltage temperature (PVT) effect transducer that responds to a PVT effect. A PVT effect quantifier is coupled to the PVT effect transducer. The PVT effect quantifier quantifies the PVT effect to provide an output. The PVT effect quantifier includes at least one counter and a period generator. The period generator provides a time period for the counter. A bias controller that is coupled to PVT effect quantifier is configured to receive the output of the PVT effect quantifier. The bias controller is configured to provide a bias voltage. The bias controller includes a bias voltage comparator.

Substrate bias control circuit for system on chip

A master-slave retention flip-flop includes a master latch adapted to latch an input data signal and to output a latched master latch data signal based on an input clock signal, a slave latch coupled to an output of the master latch and adapted to output a latched slave latch data signal based on the input clock signal, and a retention latch embedded within one of the master and slave latches adapted to preserve data in a power down mode based on a power down control signal.

Growing community of inventors

Tuku, Taiwan

Shiue Tsong Shen