Epistar Corporation

Shiuan-Leh Lin

Shih-Chang Lee

Chia-Liang Hsu

Chien-Fu Huang

Chih-Chiang Lu

Wen-Luh Liao

Mei-Chun Liu

Yi-Chieh Lin

Yung-Fu Chang

Chao-Shun Huang

Yi Hsiao

Chu-Jih Su

Hong-Chi Shih

Yi-Ming Chen

Rong-Ren Lee

I-Hung Chen

A photodetector includes a first semiconductor layer, an absorption structure, a second semiconductor layer, and a barrier structure. The absorption structure is located on the first semiconductor layer, and having a first conduction band, a first valence band, and a first band gap. The second semiconductor layer is located on the absorption structure, and having a second conduction band, a second valence band, and a second band gap. The barrier structure is located between the absorption structure and the second semiconductor layer, and having a third conduction band, a third valence band, and a third band gap. The third conduction band is greater than the second conduction band or the third valence band is less than the second valence band.

Photodetector with modified region in barrier and absorption structures

This disclosure discloses an optical sensing device. The device includes a carrier body having a topmost surface; a first light-emitting device disposed on the carrier body and having a light-emitting surface; and a light-receiving device comprising a group III-V semiconductor material disposed on the carrier body and having a light-receiving surface. The light-emitting surface is separated from the topmost surface by first distant H, the light-receiving surface is separated from the topmost surface by a second distance H, and His different from H

Optical sensing device and optical sensing system thereof comprising light emitting device and light receiving device completely sandwiched by the topmost surface and bottommost surface of a carrier body with different vertically separated distances

A photo-detecting device includes a substrate, a first semiconductor layer, a light-absorbing layer, a second semiconductor layer, a semiconductor contact layer, an insulating layer, and an electrode structure. The second semiconductor layer includes a first region and a second region. The semiconductor contact layer is on the first region. The insulating layer covers the semiconductor contact layer, the first region, and the second region. The electrode structure covers the semiconductor contact layer, the insulating layer, the first region, and the second region.

Semiconductor photo-detecting device

This disclosure discloses an optical sensing device. The device includes a carrier body; a first light-emitting device disposed on the carrier body; and a light-receiving device including a group III-V semiconductor material disposed on the carrier body, including a light-receiving surface having an area, wherein the light-receiving device is capable of receiving a first received wavelength having a largest external quantum efficiency so the ratio of the largest external quantum efficiency to the area is &#x2265;13.

Optical sensing device and optical sensing system thereof comprising a light receiving device capable of receiving a first received wavelength having a largest external quantum efficiency

The present disclosure provides a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer on the substrate; a first window layer comprising a first semiconductor optical layer on the intermediate layer and a second semiconductor optical layer on the first semiconductor optical layer; and a light-emitting stack on the second semiconductor optical layer; wherein a difference between the lattice constant of the intermediate layer and the lattice constant of the first semiconductor optical layer is greater than 2.3 &#x212b;.

Light-emitting device

This disclosure discloses a method for making a light-emitting device, comprising steps of: providing a substrate; forming a light-emitting stack on the substrate; forming a first layer on the light-emitting stack; providing a permanent substrate; forming a second layer on the permanent substrate; bonding the first layer and the second layer to form a bonding layer to connect the substrate and the permanent substrate; wherein a refractive index of the bonding layer decreases from the light-emitting stack toward the permanent substrate.

Method for making a light-emitting device

An optoelectronic device comprising a first semiconductor layer having a first lattice constant; a second semiconductor layer having a second lattice constant, wherein the second lattice constant is smaller than the first lattice constant; and a first buffer layer formed between the first semiconductor layer and the second semiconductor layer, wherein a lattice constant of one side of the first buffer layer near the second semiconductor layer is smaller than the second lattice constant.

Optoelectronic device

This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; an intermediate layer formed on the substrate; a transparent bonding layer; a first semiconductor window layer bonded to the semiconductor layer through the transparent bonding layer; and a light-emitting stack formed on the first semiconductor window layer. The intermediate layer has a refractive index between the refractive index of the substrate and the refractive index of the first semiconductor window layer.

Light-emitting device with intermediate layer

A photovoltaic cell comprises a top subcell having a first band gap; a middle subcell comprising a substrate and having a second band gap, wherein the substrate comprises a first side and a second side opposite to the first side; and a bottom subcell having a third band gap, wherein the top subcell is grown on the first side of the substrate and the bottom subcell is grown on the second side of the substrate, wherein the first band gap is larger than the second band gap and the second band gap is larger than the third band gap.

Photovoltaic cell and manufacturing method thereof

A light-emitting device disclosed herein comprises a substrate, an active layer formed on the substrate and including a first quantum well, a second quantum well and a barrier layer disposed between the first quantum well and the second quantum well. The barrier layer includes a first region adjacent to the first quantum well, a third region adjacent to the second quantum well and a second region disposed between the first region and the third region and comprising Sb.

Growing community of inventors

Hsinchu, Taiwan

Shiuan-Leh Lin