Taiwan Semiconductor Manufacturing Comp. Ltd.

Shiu-Ko Jang Jian

You-Hua Chou

Chih-Tsung Lee

Yu-Ku Lin

Chun Che Lin

Hung Jui Chang

Chih-Nan Wu

Ming-Shiou Kuo

The present disclosure provides an image sensor device and a method for manufacturing the image sensor device. An exemplary image sensor device includes a substrate having a front surface and a back surface, a plurality of sensor elements disposed at the front surface of the substrate. Each of the plurality of sensor elements is operable to sense radiation projected towards the back surface of the substrate. The image sensor also includes a high-k dielectric grid disposed over the back surface of the substrate. The high-k dielectric grid has a high-k dielectric trench and sidewalls. The image sensor also includes a color filter and a microlens disposed over the high-k dielectric grid.

Semiconducator image sensor having color filters formed over a high-K dielectric grid

A semiconductor device includes a semiconductor body and a low K dielectric layer overlying the semiconductor body. A first portion of the low K dielectric layer comprises a dielectric material, and a second portion of the low K dielectric layer comprise an air gap, wherein the first portion and the second portion are laterally disposed with respect to one another. A method for forming a low K dielectric layer is also disclosed and includes forming a dielectric layer over a semiconductor body, forming a plurality of air gaps laterally disposed from one another in the dielectric layer, and forming a capping layer over the dielectric layer and air gaps.

Integrated technology for partial air gap low K deposition

Growing community of inventors

Tainan, Taiwan

Shiu-Ko Jang Jian