Ricoh Company, Ltd.

Shisyo Chin

Tetsuya Okada

Koichi Sogawa

Akinori Suzuki

Tadao Uehara

Tohru Haruki

Masanori Miyata

Kenji Nishihara

Yuuichi Kohno

Hiroaki Teratani

Taro Usami

A chemical mechanical polishing method including a step of forming a plurality of interlayer insulating films so as to coat a plurality of projecting patterns, at least one of the plurality of projecting patterns being formed on each of a plurality of substrates, whereby the plurality of projection patterns have different area ratios R with respect to the corresponding substrates, and performing a flattening process on the interlayer insulating films before linear approximation; a step of obtaining a linear approximation formula R=aT+b expressing a relationship between the area ratio R and a polishing time T, where R, R, R, . . . , Rx represent the area ratio R of each of the projecting patterns with respect to the corresponding substrates, and T, T, T, . . . , Tx represent the polishing time T required for achieving a target film thickness when performing the flattening process by polishing each of the interlayer insulating films coating the projecting patterns; and a step of calculating, with the use of a formula T=(R&#x2212;b)/a, the polishing time T for the interlayer insulating films coating the projecting patterns having the area ratio R.

Chemical mechanical polishing method and chemical mechanical polishing device

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Hyogo, Japan

Shisyo Chin